RF PIN diode in a SOT-23-3 pair
The Infineon BAR66E6327HTSA1 is a silicon PIN diode configured as a single pair in series connection, housed in a PG-SOT23 package. It is designed for RF switching, attenuator, and limiter circuits where low capacitance and low series resistance at forward bias are required. Typical applications include antenna switch modules, variable attenuators in base-station and handset front-ends, and RF limiter stages for receiver protection. The part is rated for a peak reverse voltage of 150V and a maximum forward current of 200 mA, with a power dissipation limit of 250 mW.
The 0.6 pF capacitance at 35 V reverse bias (measured at 1 MHz) keeps off-state insertion low through UHF and low-microwave bands. The 1.8 Ω series resistance at 5 mA and 100 MHz defines on-state insertion loss.
The BAR66E6327HTSA1 uses the standard SOT-23-3 footprint (TO-236-3 / SC-59 variant), with the supplier device package designated PG-SOT23. This is a widely used three-lead surface-mount package compatible with automated pick-and-place assembly.