Infineon BFP420H6801 NPN RF transistor, 25 GHz transition frequency, 21 dB gain, 1.1 dB noise figure at 1.8 GHz, 60 mA collector current, 210 mW max power, SC-82A SOT-343 surface-mount package.
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| FET type | NPN |
| Voltage - collector emitter breakdown | 4.5V |
| Current - collector (Ic) | 60mA |
| DC current gain (hFE) (Min) @ ic, vce | 60 @ 20mA, 4V |
| Power - max | 210mW |
| Frequency - transition | 25GHz |
| Operating temperature | 150°C (TJ) |
| Gain | 21dB |
| Package | Bulk |
| Case | SC-82A, SOT-343 |
| Noise figure (dB typ @ f) | 1.1dB @ 1.8GHz |
The Infineon BFP420H6801 is an NPN silicon RF transistor in a PG-SOT343-4-2 package. It has 25 GHz transition frequency and 21 dB gain.
The SOT-343 package is a four-lead supermini. The 150 °C junction temperature rating means it can sit near a hot PA stage.
The maximum power dissipation is 210 mW. This sets the thermal budget for the SOT-343 package — rely on board copper for heat sinking, not an external heatsink.
The listed gain is 21 dB at a typical bias point. That is enough to lift a -10 dBm signal to +11 dBm into 50 Ω without an extra stage.
The maximum collector current (Ic) is 60 mA. Combined with the 4.5 V Vce breakdown, this transistor is sized for small-signal stages, not power output.