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Infineon Technologies BFP420H6801

Infineon BFP420H6801 RF Transistor NPN, 25 GHz, 21 dB Gain

MPNBFP420H6801
End of Life

Infineon BFP420H6801 NPN RF transistor, 25 GHz transition frequency, 21 dB gain, 1.1 dB noise figure at 1.8 GHz, 60 mA collector current, 210 mW max power, SC-82A SOT-343 surface-mount package.

$0.18Ref. price · indicative, final on quote
PackagingSC-82A, SOT-343
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
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Specifications

BFP420H6801 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN
Voltage - collector emitter breakdown4.5V
Current - collector (Ic)60mA
DC current gain (hFE) (Min) @ ic, vce60 @ 20mA, 4V
Power - max210mW
Frequency25GHz
Operating temperature150°C (TJ)
Gain21dB
PackageBulk
CaseSC-82A, SOT-343
Noise figure (dB typ @ f)1.1dB @ 1.8GHz

Product details

X-band NPN in a tiny SOT-343

The Infineon BFP420H6801 is an NPN silicon RF transistor in a PG-SOT343-4-2 package. It has 25 GHz transition frequency and 21 dB gain.

SOT-343 — orientation and handling

The SOT-343 package is a four-lead supermini. The 150 °C junction temperature rating means it can sit near a hot PA stage.

Sourcing and lifecycle — active, no LTB clock

The BFP420H6801 carries an Active lifecycle status. Infineon still runs this part, so it is suitable for new designs and production replenishment through standard distribution.

Frequently asked questions

What is the maximum power dissipation of BFP420H6801?

The maximum power dissipation is 210 mW. This sets the thermal budget for the SOT-343 package — rely on board copper for heat sinking, not an external heatsink.

What is the gain of BFP420H6801 at typical bias?

The listed gain is 21 dB at a typical bias point. That is enough to lift a -10 dBm signal to +11 dBm into 50 Ω without an extra stage.

What is the maximum collector current of BFP420H6801?

The maximum collector current (Ic) is 60 mA. Combined with the 4.5 V Vce breakdown, this transistor is sized for small-signal stages, not power output.