Infineon BFP650FH6327XTSA1 NPN SiGe RF transistor, 42 GHz transition frequency, 11 dB to 21.5 dB gain, 0.8 dB to 1.9 dB noise figure, 4.5 V Vceo, 150 mA Ic, 4-TSFP surface-mount package, ROHS3 compliant.
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| FET type | NPN |
| Voltage - collector emitter breakdown | 4.5V |
| Current - collector (Ic) | 150mA |
| DC current gain (hFE) (Min) @ ic, vce | 110 @ 80mA, 3V |
| Power - max | 500mW |
| Frequency - transition | 42GHz |
| Operating temperature | 150°C (TJ) |
| Gain | 11dB ~ 21.5dB |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | 4-SMD, Flat Leads |
| Noise figure (dB typ @ f) | 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz |
The Infineon BFP650FH6327XTSA1 is a SiGe NPN RF transistor with 42 GHz transition frequency and 0.8 dB to 1.9 dB noise figure. It operates at 4.5 V Vceo and 150 mA Ic.
Gain spans 11 dB to 21.5 dB. Noise figure is 0.8 dB typ at 1.8 GHz and 1.9 dB at 6 GHz.
The 4-TSFP package has flat leads for reduced parasitic inductance at 42 GHz.
No LTB risk, no broker-only scramble.
It comes in a 4-TSFP surface-mount package with flat leads, also described as 4-SMD, Flat Leads.
A close functional peer is the BFP640FH6327XTSA1, which offers a similar 40 GHz fT and slightly lower noise figure (0.65 dB to 1.2 dB at 1.8 GHz to 6 GHz), but with lower power handling (200 mW vs 500 mW) and lower collector current (30 mA vs 150 mA). The BFP650 is the higher-current, higher-power choice for driver stages; the BFP640 is better for ultra-low-noise receiver front-ends where current budget is tight.