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Infineon Technologies BFR340L3E6327XTMA1 — Discrete Semiconductors

Infineon BFR340L3E6327XTMA1 NPN RF Transistor, 14 GHz

MPNBFR340L3E6327XTMA1
End of Life

Infineon Technologies BFR340L3E6327XTMA1 NPN RF transistor, 14 GHz transition frequency, 17.5 dB gain, 1.15 dB noise figure, PG-TSLP-3-1 package, 9 V Vceo, 10 mA Ic.

$0.43Ref. price · indicative, final on quote
PackagingSC-101, SOT-883
StockContact for availability
Lead timeIn Stock wk
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BFR340L3E6327XTMA1 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN
Voltage - collector emitter breakdown9V
Current - collector (Ic)10mA
DC current gain (hFE) (Min) @ ic, vce90 @ 5mA, 3V
Power - max60mW
Frequency14GHz
Operating temperature150°C (TJ)
Gain17.5dB
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-101, SOT-883
Noise figure (dB typ @ f)1.15dB @ 1.8GHz

Product details

14 GHz fT, 17.5 dB gain — LNA front-end fit

The BFR340L3E6327XTMA1 is an NPN RF transistor from Infineon with a 14 GHz transition frequency and 17.5 dB gain at 1.8 GHz, making it a candidate for low-noise amplifier stages in the 1.5–2.5 GHz band — cellular, ISM, or GPS front-ends. Noise figure is 1.15 dB at 1.8 GHz, which keeps the cascaded noise budget tight enough for a sub-2 dB receiver NF when the LNA is the first active stage. Collector current is capped at 10 mA and Vceo at 9 V — this is a small-signal device, not a driver. The operating point for best NF typically falls around 5 mA, where hFE is specified at 90 minimum.

PG-TSLP-3-1 footprint and thermal reality

The PG-TSLP-3-1 package (SOT-883 compatible) is a 0.4 mm pitch leadless package with no exposed thermal pad — all heat dissipates through the collector terminal and the PCB copper. The 60 mW max power rating assumes a standard FR-4 footprint with minimal copper pour.

Active lifecycle, ROHS3 — no sourcing surprises

Infineon lists the BFR340L3E6327XTMA1 as Active with no NRND or last-time-buy flags — it remains a valid design-in choice for new RF front-end boards. ROHS3 compliant means no substance exemptions expire on a fixed calendar — the part stays compliant with EU and China RoHS without a compliance re-spin.

Frequently asked questions

What is the gain and noise figure of BFR340L3E6327XTMA1?

The transistor provides 17.5 dB gain and 1.15 dB noise figure, both specified at 1.8 GHz — suitable for LNA stages in the 1.5–2.5 GHz range.

What package does BFR340L3E6327XTMA1 use?

It comes in the PG-TSLP-3-1 package (SOT-883), a 3-pin leadless package with 0.4 mm pitch — no exposed thermal pad, so heat removal depends on the collector PCB trace.

Where can I buy BFR340L3E6327XTMA1 and get a quote?

Submit an RFQ for a firm quote.