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Infineon Technologies BF776H6327

Infineon BF776H6327 RF NPN Transistor, 24 dB Gain, 46 GHz fT

MPNBF776H6327
End of Life

Infineon BF776H6327 RF NPN transistor, 24 dB gain, 46 GHz transition frequency, 0.8 dB noise figure at 1.8 GHz, 50 mA max collector current, 4.7 V Vceo, SC-82A SOT-343 surface-mount package.

$0.16Ref. price · indicative, final on quote
PackagingSC-82A, SOT-343
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BF776H6327 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN
Voltage - collector emitter breakdown4.7V
Current - collector (Ic)50mA
DC current gain (hFE) (Min) @ ic, vce180 @ 30mA, 3V
Power - max200mW
Frequency46GHz
Operating temperature150°C (TJ)
Gain24dB
PackageBulk
CaseSC-82A, SOT-343
Noise figure (dB typ @ f)0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz

Product details

Package and footprint — SOT-343 for dense RF layouts

The BF776H6327 comes in a 4-lead SOT-343 surface-mount package (Infineon code PG-SOT343-4). This is a standard RF transistor footprint suited for compact LNA modules on FR4 or ceramic substrates.

DC bias and gain — 180 hFE at 30 mA

With a minimum DC current gain (hFE) of 180 at 30 mA collector current and 3 V Vce, this transistor provides consistent gain across the bias point. Maximum collector current is 50 mA, and total power dissipation is rated at 200 mW — enough for a small-signal LNA but not a driver stage. The 150 °C junction temperature rating gives thermal headroom in compact enclosures.

Lifecycle and sourcing — active, no LTB pressure

The BF776H6327 carries an active lifecycle status from Infineon. No end-of-life notice or last-time-buy window is in effect, so this BOM line can be committed without near-term obsolescence risk.

Frequently asked questions

What is the noise figure of BF776H6327?

The noise figure is 0.8 dB typical at 1.8 GHz, rising to 1.3 dB at 6 GHz. This sub-1 dB figure at cellular bands makes it suitable for sensitive receiver front-ends.

What is the closest pin-compatible alternative to BF776H6327?

Within the same Infineon portfolio, the BF776 series shares the SOT-343 footprint and similar RF performance. For a direct pin-compatible second source, the BFP740H6327 from Infineon is a common cross-shop candidate with comparable gain and noise figure in the same package.

What is BF776H6327's listed gain?

The BF776H6327 has a listed gain of 24 dB. This is the typical forward gain at the rated bias point.