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Infineon HEXFET® IRF540NPBF, N-Channel MOSFET, 100 V Vdss, 33 A Id, 44 mOhm Rds(on) @ 16 A 10 V, 71 nC Qg, TO-220-3, -55 to 175 °C.

IRF540NL, Infineon HEXFET series, N-Channel MOSFET, 100V Vdss, 33A Id, 44mOhm Rds(on) at 10V, TO-262-3 package, -55°C to 175°C operating temperature.

Infineon IRF540NLPBF, HEXFET® Series, N-Channel MOSFET, 100 V Drain-Source, 33 A Continuous Drain, 44 mΩ Rds(on) @ 16 A, 10 V, TO-262-3 Long Leads (I²Pak), Through Hole, -55°C to 175°C.

Infineon IRF540NSPBF, HEXFET series, N-Channel MOSFET, 100V Vdss, 33A continuous drain, 44mOhm Rds(on) at 10V gate drive, D2PAK surface-mount, -55 to 175°C junction temperature.

Infineon HEXFET® IRF540NSTRLPBF, N-Channel MOSFET, 100 V Vdss, 33 A Id, 44 mOhm Rds(on) at 10 V, D2PAK (TO-263) surface mount, -55°C to 175°C junction temperature.

Infineon IRF540NSTRRPBF, HEXFET® Series, N-Channel MOSFET, 100 V Vdss, 33 A Id, 44 mΩ Rds(on) @ 16 A, 10 V, ±20 V Vgs, 71 nC Qg, D2PAK (TO-263-3), -55°C to 175°C.

Infineon IRF540ZPBF, HEXFET® series N-channel MOSFET, 100V Vdss, 36A continuous drain at 25°C case, 26.5mOhm Rds(on) at 22A/10V, 63nC gate charge, TO-220AB through-hole package, -55 to 175°C junction temperature.

Infineon HEXFET® IRF540ZSPBF, N-Channel MOSFET, 100 V Vdss, 36 A Id, 26.5 mOhm Rds(on) at 10 V, D2PAK (TO-263-3), -55°C to 175°C.

IRF540Z, N-Channel MOSFET, HEXFET® Series, 100V Vdss, 36A Id, 26.5mOhm Rds(on) at 10V, 63nC Qg, TO-220-3, Through Hole, -55°C to 175°C.

Infineon HEXFET® P-Channel MOSFET, IRF9540NSTRLPBF, 100V Vdss, 23A Id, 117mOhm Rds(on) at 10V Vgs, D2PAK (TO-263) surface-mount, -55°C to 150°C junction temperature.

Infineon HEXFET® IRF640NSTRLPBF, N-Channel MOSFET, 200 V Vdss, 18 A Id, 150 mOhm Rds(on) at 11 A, 10 V, 67 nC gate charge, D2PAK package, -55°C to 175°C.

Infineon HEXFET series, IRF520NPBF, N-Channel MOSFET, 100 V Vdss, 9.7 A continuous drain, 200 mOhm Rds(on) at 10 V, TO-220-3 through-hole package, -55°C to 175°C junction temperature.

IRF530NPBF, HEXFET® N-Channel MOSFET, 100 V Vdss, 17 A continuous drain, 90 mOhm Rds(on) at 10 V, 37 nC gate charge, TO-220AB through-hole package, -55°C to 175°C junction temperature.

IRF (Infineon) HEXFET N-Channel MOSFET, IRF530NSTRLPBF, 100 V Vdss, 17 A continuous drain, 90 mOhm Rds(on) at 10 V, D2PAK (TO-263), surface mount, -55°C to 175°C junction.

Infineon IRF9540NPBF HEXFET P-Channel MOSFET, 100 V Vdss, 23 A Id, 117 mOhm Rds(on) at 10 V, 97 nC Qg, TO-220AB, -55 to 150 °C.

Infineon HEXFET® IRL540NSTRLPBF, N-Channel MOSFET, 100 V Vdss, 36 A continuous drain, 44 mOhm Rds(on) at 18 A, 10 V, D2PAK (TO-263) surface mount, -55°C to 175°C junction.

Infineon HEXFET® series, IRFI540NPBF, N-Channel MOSFET, 100 V drain-to-source, 20 A continuous drain at 25°C, 52 mOhm Rds(on) at 11 A and 10 V gate drive, TO-220 Full Pack through-hole package, -55°C to 175°C junction temperature.

IRL540NPBF, Infineon HEXFET® series, N-Channel MOSFET, 100V Vdss, 36A Id, 44mOhm Rds(on) at 10V Vgs, TO-220-3, Through Hole, -55°C~175°C.

Infineon Technologies HEXFET® N-Channel MOSFET, TO-262-3 (I²Pak), 100 V Vdss, 36 A Id, 26.5 mOhm Rds(on), Tube.

Infineon Technologies HEXFET® N-Channel MOSFET, 200 V, 18 A, 150 mOhm, TO-220AB, Tube.

IRF540ZL, International Rectifier HEXFET® N-Channel MOSFET, 100 V Vdss, 36 A continuous drain, 26.5 mΩ Rds(on) at 22 A, 63 nC gate charge, TO-262-3 (I²Pak) through-hole package.

Infineon HEXFET® IRF540ZS, N-Channel MOSFET, 100 Vdss, 36 A continuous drain, 26.5 mOhm Rds(on) at 10 V, TO-263-3 D2PAK surface mount, -55°C to 175°C junction temperature.

IRF540ZSTRL, Infineon HEXFET® N-Channel MOSFET, 100 V Vdss, 36 A Id, 26.5 mOhm Rds(on) at 22 A, 10 V gate drive, TO-263-3 D2PAK surface mount, -55°C to 175°C junction temperature.

Infineon HEXFET® IRF540ZSTRLPBF, N-Channel MOSFET, 100 V Vdss, 36 A Id, 26.5 mOhm Rds(on) @ 22 A, 10 V, TO-263-3 (D²Pak) surface mount, -55°C to 175°C.

IRF540ZSTRR, Infineon HEXFET series, N-Channel MOSFET, 100 V Vdss, 36 A Id, 26.5 mOhm Rds(on) at 10 V, 63 nC Qg, TO-263-3 (D2PAK), -55°C to 175°C.

Infineon Technologies HEXFET® series, N-Channel MOSFET, 200 V Vdss, 18 A Id, TO-262-3 Long Leads I²Pak package, Tube.

Infineon IRF640NLPBF, HEXFET® Series, N-Channel MOSFET, 200 V Vdss, 18 A Id, 150 mOhm Rds(on) @ 11 A 10 V, TO-262-3 Long Leads I²Pak TO-262AA, Through Hole, -55°C to 175°C.

Infineon IRF640NSPBF HEXFET® N-Channel MOSFET, 200 V Vdss, 18 A continuous drain, 150 mΩ Rds(on) at 10 V, D2PAK (TO-263) surface mount, -55 to 175°C junction temperature.

IRF640NSTRRPBF, Infineon HEXFET series, N-Channel MOSFET, 200V Vdss, 18A Id, 150mOhm Rds(on) at 10V, D2PAK (TO-263), -55°C to 175°C.

Infineon IRF9540NL, HEXFET® series, P-Channel MOSFET, 100V Vdss, 23A Id, 117mOhm Rds(on) @ 11A 10V, TO-262-3 (I²Pak), Through Hole, -55°C to 150°C.

Infineon IRF9540NLPBF HEXFET P-Channel MOSFET, 100 V drain-to-source voltage, 23 A continuous drain current at 25°C case, 117 mOhm on-resistance at 14 A and 10 V gate drive, TO-262-3 (I²Pak) through-hole package, -55°C to 150°C junction temperature range.

Infineon HEXFET® IRF9540NSPBF, P-Channel MOSFET, 100 V Vdss, 23 A Id, 117 mΩ Rds(on) at 10 V, D2PAK (TO-263), -55°C to 150°C.

IRF9540NSTRR, Infineon HEXFET® P-Channel Power MOSFET, 100V Vdss, 23A Id, 117mOhm Rds(on) at 10V, D2PAK (TO-263) surface mount, -55°C to 150°C.

Infineon HEXFET® IRF9540NSTRRPBF, P-Channel MOSFET, 100 V Vdss, 23 A Id, 117 mOhm Rds(on) at 10 V, D2PAK (TO-263), -55°C to 150°C.

Infineon HEXFET® series IRL540NL, N-Channel MOSFET, 100V Vdss, 36A Continuous Drain, 44mOhm Rds(on) @ 18A, 10V, TO-262-3 Long Leads (I²Pak, TO-262AA) Through Hole.

Infineon HEXFET® series, N-Channel MOSFET, 100 V Drain to Source Voltage, 36 A Continuous Drain Current, 44 mOhm Rds On @ 18 A 10 V, Through Hole, TO-262-3 Long Leads I²Pak TO-262AA, -55°C to 175°C.

Infineon IRL540NSPBF HEXFET N-Channel MOSFET, 100V Vdss, 36A Id, 44mOhm Rds On at 18A 10V, logic-level gate, D2PAK surface mount, -55°C to 175°C.

IRL540NSTRL, N-Channel MOSFET, 100 V drain-source voltage, 36 A continuous drain current, 44 mOhm on-resistance at 10 V gate drive, logic-level gate threshold, D2PAK (TO-263) surface-mount package, Cut Tape.

Infineon HEXFET® series, IRL540NSTRR, N-Channel MOSFET, 100V Vdss, 36A Id, 44mOhm Rds(on) at 10V, 74nC Qg, TO-263-3 D2PAK surface mount, -55°C to 175°C junction.

Infineon HEXFET® series, IRL540NSTRRPBF, N-Channel MOSFET, 100 V Vdss, 36 A continuous drain, 44 mOhm Rds(on) at 10 V, logic-level gate drive (4 V threshold), D2PAK package, surface mount.

International Rectifier IRF640, N-Channel MOSFET, MESH OVERLAY™ series, 200 V Vdss, 18 A continuous drain, 180 mOhm Rds(on) at 10 V gate drive, TO-220-3 through-hole package.

Infineon HEXFET® AUIRF540Z, N-Channel MOSFET, 100V Vdss, 36A Id, 26.5mOhm Rds(on) at 10V Vgs, 63nC Qg, TO-220AB through-hole package, -55°C to 175°C junction temperature.

Infineon HEXFET® AUIRFR540ZTRL, N-Channel MOSFET, 100 V Vdss, 35 A continuous drain, 28.5 mOhm Rds(on) at 10 V, DPAK (TO-252) surface-mount package.

Renesas RJK1053DPB-00#J5, N-Channel MOSFET, 100 V drain-source, 25 A continuous drain, 13 mOhm Rds(on) at 10 V, LFPAK SC-100 SOT-669 surface-mount package, 150°C junction temperature.

Renesas RJK0358DPA-01#J0B, N-Channel Power MOSFET, Active lifecycle, ROHS3 Compliant, Bulk package.

STMicroelectronics DeepGATE™, STripFET™ VII series, N-Channel MOSFET, 100 V drain-source, 45 A continuous drain, 18 mOhm Rds(on) at 10 V, TO-220-3 through-hole package, -55°C to 175°C junction temperature.

MOSFET N-CH 100V 28A D2PAK

MOSFET N-CH 100V 28A D2PAK

MOSFET N-CH 100V 28A TO220AB

MOSFET N-CH 100V 28A D2PAK