Infineon IRF540NSTRRPBF, HEXFET® Series, N-Channel MOSFET, 100 V Vdss, 33 A Id, 44 mΩ Rds(on) @ 16 A, 10 V, ±20 V Vgs, 71 nC Qg, D2PAK (TO-263-3), -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 33A (Tc) |
| Power dissipation | 130W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 44mOhm @ 16A, 10V |
| Gate charge (Qg) (Max) @ vgs | 71 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1960 pF @ 25 V |
The 175°C maximum junction gives headroom for high-current operation with adequate heatsinking.
Supplied in a D2PAK (TO-263-3) surface-mount package with two leads and a tab. The D2PAK footprint is standard for 30–50 A class MOSFETs and allows reflow assembly alongside other SMD components.
Infineon lists the IRF540NSTRRPBF as obsolete.
No official replacement part number is listed in the available lifecycle data. For a pin-compatible alternative, look for other N-channel D2PAK MOSFETs with 100 V Vdss and similar Rds(on); verify the gate drive voltage and package footprint against your design.
It is an N-channel HEXFET in a D2PAK surface-mount package.
The maximum gate threshold voltage is 4 V at a drain current of 250 µA.