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Infineon Technologies IRF530NPBF
Infineon Technologies

IRF530NPBF N-Channel MOSFET, 100 V, 17 A, TO-220AB

MPNIRF530NPBF
End of Life

IRF530NPBF, HEXFET® N-Channel MOSFET, 100 V Vdss, 17 A continuous drain, 90 mOhm Rds(on) at 10 V, 37 nC gate charge, TO-220AB through-hole package, -55°C to 175°C junction temperature.

$0.91Ref. price · indicative, final on quote
IRF530NPBF datasheet
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRF530NPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C17A (Tc)
Power dissipation70W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs90mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs37 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds920 pF @ 25 V

Product details

Junction temperature and switching budget

The 37 nC total gate charge at 10 V means a 1 A gate driver can switch this FET at roughly 27 kHz before the average gate-drive current hits 1 A — a practical ceiling for hard-switched topologies. Input capacitance is 920 pF at 25 V drain bias. That capacitance, combined with the gate-drive source impedance, sets the turn-on and turn-off delay; a 10 Ω gate resistor and a 1 A driver yields a ~10 ns rise time, which keeps switching losses manageable up to 100 kHz in a clamped-inductive load.

Through-hole TO-220AB — heatsink-ready

The TO-220AB package (TO-220-3) is a through-hole, single-gauge tab with a mounting hole for a screw-on heatsink. The 70 W maximum power dissipation at case temperature assumes the tab is bolted to an infinite heatsink — real-world derating follows the junction-to-case thermal resistance, which the datasheet's thermal curves provide.

Frequently asked questions

What is the Vdss of IRF530NPBF?

The drain-to-source voltage rating is 100 V. That is the maximum voltage the FET can block when off; for reliable operation, derate to 80 V or less in continuous switching applications.

Can I use IRF530NPBF for PWM applications?

Yes. The 37 nC gate charge and 920 pF input capacitance are moderate — a 1 A gate driver can switch this FET at tens of kHz with acceptable gate-drive losses. For frequencies above 100 kHz, the switching losses in a hard-switched topology may dominate the thermal budget; a lower-Qg part would be a better fit.