IRF530NPBF

Infineon Technologies · HEXFET® Series

IRF530NPBF, HEXFET® N-Channel MOSFET, 100 V Vdss, 17 A continuous drain, 90 mOhm Rds(on) at 10 V, 37 nC gate charge, TO-220AB through-hole package, -55°C to 175°C junction temperature.

Infineon Technologies IRF530NPBF
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Technical specifications

IRF530NPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C17A (Tc)
Power dissipation70W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs90mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs37 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds920 pF @ 25 V

Technical details

Junction temperature and switching budget

The 37 nC total gate charge at 10 V means a 1 A gate driver can switch this FET at roughly 27 kHz before the average gate-drive current hits 1 A — a practical ceiling for hard-switched topologies. That capacitance, combined with the gate-drive source impedance, sets the turn-on and turn-off delay; a 10 Ω gate resistor and a 1 A driver yields a ~10 ns rise time, which keeps switching losses manageable up to 100 kHz in a clamped-inductive load.

Through-hole TO-220AB — heatsink-ready

The TO-220AB package (TO-220-3) is a through-hole, single-gauge tab with a mounting hole for a screw-on heatsink.

IRF530NPBF
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