What this HEXFET® delivers
The Infineon AUIRFR540ZTRL is an N-channel enhancement-mode MOSFET built on the HEXFET® trench technology. It switches a 100 V drain-source voltage and conducts up to 35 A continuous drain current at 25 °C case temperature. The 28.5 mOhm maximum on-resistance at 21 A with a 10 V gate drive keeps conduction losses manageable in a 91 W dissipation budget. Total gate charge of 59 nC at 10 V means a moderate gate-drive current requirement for the switching frequencies typical of DC-DC converters, motor pre-drives, and load switches.
Rated for the rough spots
The junction temperature range spans -55 °C to 175 °C, so this part handles under-hood automotive ambient and industrial cabinet heat without derating surprises. The maximum gate-source voltage is ±20 V, giving margin against ringing on long gate traces. Input capacitance is 1690 pF at 25 V drain bias — a typical figure for a 100 V trench MOSFET in this current class, and one that sets the driver output impedance target for clean switching.
Package and mounting
Supplied in a DPAK (TO-252-3) surface-mount package with two leads plus the tab. The tab is the drain connection and needs a proper copper area on the PCB for thermal management. The TR suffix indicates Tape & Reel delivery, which suits automated pick-and-place assembly lines. Cut Tape (CT) is also available for prototyping or small-batch builds.
Lifecycle and compliance
The AUIRFR540ZTRL carries an active product status and is ROHS3 compliant. No end-of-life notification is recorded for this order code, so it remains a safe choice for current-production BOMs. Sourced through independent distribution and quoted to order against an RFQ; current availability and pricing confirmed at quote time.