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Infineon Technologies AUIRFR540ZTRL

AUIRFR540ZTRL N-Channel MOSFET, 100V 35A DPAK, HEXFET®

MPNAUIRFR540ZTRL
End of Life

Infineon HEXFET® AUIRFR540ZTRL, N-Channel MOSFET, 100 V Vdss, 35 A continuous drain, 28.5 mOhm Rds(on) at 10 V, DPAK (TO-252) surface-mount package.

$2.76Ref. price · indicative, final on quote
Infineon Technologies AUIRFR540ZTRL datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

AUIRFR540ZTRL specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C35A (Tc)
Power dissipation91W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 50µA
Rds on (Max) @ id, vgs28.5mOhm @ 21A, 10V
Gate charge (Qg) (Max) @ vgs59 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1690 pF @ 25 V

Product details

What this HEXFET® delivers

The Infineon AUIRFR540ZTRL is an N-channel enhancement-mode MOSFET built on the HEXFET® trench technology. The 28.5 mOhm maximum on-resistance at 21 A with a 10 V gate drive keeps conduction losses manageable in a 91 W dissipation budget. Total gate charge of 59 nC at 10 V means a moderate gate-drive current requirement for the switching frequencies typical of DC-DC converters, motor pre-drives, and load switches.

Rated for the rough spots

The maximum gate-source voltage is ±20 V, giving margin against ringing on long gate traces.

Supplied in a DPAK (TO-252-3) surface-mount package with two leads plus the tab. The TR suffix indicates Tape & Reel delivery, which suits automated pick-and-place assembly lines. Cut Tape (CT) is also available for prototyping or small-batch builds.

No end-of-life notification is recorded for this order code, so it remains a safe choice for current-production BOMs.

Frequently asked questions

What is the Rds(on) of AUIRFR540ZTRL?

The maximum on-resistance is 28.5 mOhm at a drain current of 21 A with a 10 V gate-source drive.

Is AUIRFR540ZTRL a standard N-channel MOSFET?

Yes, it is a standard enhancement-mode N-channel MOSFET using Infineon's HEXFET® trench technology, suitable for general-purpose switching and power management.