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STMicroelectronics IRF640 — Discrete Semiconductors

IRF640 N-Channel MOSFET, 200 V, 18 A, TO-220-3

MPNIRF640
Obsolete

International Rectifier IRF640, N-Channel MOSFET, MESH OVERLAY™ series, 200 V Vdss, 18 A continuous drain, 180 mOhm Rds(on) at 10 V gate drive, TO-220-3 through-hole package.

$1.0700Ref. price · indicative, final on quote
STMicroelectronics IRF640 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF640 specifications
ParameterValue
SeriesMESH OVERLAY™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C18A (Tc)
Power dissipation125W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs180mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs72 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1560 pF @ 25 V

Product details

The International Rectifier IRF640 is an N-channel power MOSFET built on the MESH OVERLAY™ technology. The TO-220-3 through-hole package bolts into a heatsink and is easy to swap in the field with a screwdriver and a bit of thermal compound.

The IRF640 is listed as obsolete. If you have this part on a BOM, you need to source it through the surplus or broker channel, or qualify a replacement.

Gate charge is 72 nC at 10 V, so the driver must supply that charge per switching cycle. Input capacitance is 1560 pF at 25 V drain — a modest load for most gate drivers.

Frequently asked questions

IRF640 vs IRF640N: what is the difference?

The IRF640N is a later-generation part with a lower typical on-resistance and faster switching. The IRF640 has a maximum Rds(on) of 180 mOhm at 10 V gate drive, while the IRF640N typically offers around 150 mOhm or less. Both are N-channel, 200 V rated, and come in TO-220 packages, but verify pin compatibility and gate drive requirements before substitution.