IRF640

STMicroelectronics

International Rectifier IRF640, N-Channel MOSFET, MESH OVERLAY™ series, 200 V Vdss, 18 A continuous drain, 180 mOhm Rds(on) at 10 V gate drive, TO-220-3 through-hole package.

STMicroelectronics IRF640
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[IN STOCK] In Stock: 406 pcs
$0.36/ pc

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Technical specifications

IRF640 specifications
Parameter / AttributeSpecification / Value
SeriesMESH OVERLAY™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C18A (Tc)
Power dissipation125W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs180mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs72 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1560 pF @ 25 V

Technical details

IRF640
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