Infineon HEXFET® AUIRF540Z, N-Channel MOSFET, 100V Vdss, 36A Id, 26.5mOhm Rds(on) at 10V Vgs, 63nC Qg, TO-220AB through-hole package, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 36A (Tc) |
| Power dissipation | 92W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 26.5mOhm @ 22A, 10V |
| Gate charge (Qg) (Max) @ vgs | 63 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1770 pF @ 25 V |
The AUIRF540Z: Through-hole N-channel HEXFET MOSFET in a TO-220AB package, rated for 100 V drain-source and 36 A continuous drain current at 25°C case temperature. Maximum on-resistance is 26.5 mOhm at 10 V gate drive and 22 A drain current.
TO-220AB through-hole package, three leads. Gate threshold is 4 V max at 250 µA drain current.
Maximum on-resistance is 26.5 milliohms at 22 A drain current with 10 V gate drive. That's the figure you use for conduction loss calculations in a switching supply or motor drive.
Yes — the AUIRF540Z is the Infineon (formerly International Rectifier) automotive-qualified version of the IRF540Z. Same TO-220AB footprint, same 100 V / 36 A rating, same gate drive requirements. If you've got a board with a blown IRF540Z, the AUIRF540Z drops in as a direct replacement.
Gate charge is 63 nC at 10 V gate-source voltage. That's the total charge the gate driver has to deliver to switch the FET on; it determines the drive current and switching speed you can achieve.
Yes — the AUIRF540Z is ROHS3 compliant, meaning no restricted substances above the exemption thresholds. No lead, no mercury, no cadmium in the plating or solder terminations.