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Infineon Technologies AUIRF540Z
Infineon Technologies

AUIRF540Z N-Channel MOSFET, 100V 36A, TO-220AB, Active

MPNAUIRF540Z
End of Life

Infineon HEXFET® AUIRF540Z, N-Channel MOSFET, 100V Vdss, 36A Id, 26.5mOhm Rds(on) at 10V Vgs, 63nC Qg, TO-220AB through-hole package, -55°C to 175°C junction temperature.

$2.55Ref. price · indicative, final on quote
AUIRF540Z datasheet
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

AUIRF540Z Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C36A (Tc)
Power dissipation92W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs26.5mOhm @ 22A, 10V
Gate charge (Qg) (Max) @ vgs63 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1770 pF @ 25 V

Product details

Package and mounting

The AUIRF540Z: Through-hole N-channel HEXFET MOSFET in a TO-220AB package, rated for 100 V drain-source and 36 A continuous drain current at 25°C case temperature. Maximum on-resistance is 26.5 mOhm at 10 V gate drive and 22 A drain current. Gate charge is 63 nC at 10 V; input capacitance is 1770 pF at 25 V drain-source.

Lifecycle and compliance — no LTB worry here

The AUIRF540Z carries an active lifecycle status and is ROHS3 compliant. No last-time-buy clock ticking on this one — it's a current Infineon catalog part, which means you can qualify it into a new BOM without worrying about a sudden EOL notice next quarter.

Mounting and package — through-hole, no surprises

TO-220AB through-hole package, three leads. Gate threshold is 4 V max at 250 µA drain current.

Frequently asked questions

What is the Rds(on) of AUIRF540Z at 10V Vgs?

Maximum on-resistance is 26.5 milliohms at 22 A drain current with 10 V gate drive. That's the figure you use for conduction loss calculations in a switching supply or motor drive.

Is AUIRF540Z a direct replacement for IRF540Z?

Yes — the AUIRF540Z is the Infineon (formerly International Rectifier) automotive-qualified version of the IRF540Z. Same TO-220AB footprint, same 100 V / 36 A rating, same gate drive requirements. If you've got a board with a blown IRF540Z, the AUIRF540Z drops in as a direct replacement.

What is the gate charge (Qg) of AUIRF540Z?

Gate charge is 63 nC at 10 V gate-source voltage. That's the total charge the gate driver has to deliver to switch the FET on; it determines the drive current and switching speed you can achieve.

Is AUIRF540Z RoHS compliant?

Yes — the AUIRF540Z is ROHS3 compliant, meaning no restricted substances above the exemption thresholds. No lead, no mercury, no cadmium in the plating or solder terminations.