Skip to main content
Log in
Infineon Technologies IRL540NSTRRPBF — Discrete Semiconductors

IRL540NSTRRPBF HEXFET N-Channel MOSFET, 100V 36A

MPNIRL540NSTRRPBF
End of Life

Infineon HEXFET® series, IRL540NSTRRPBF, N-Channel MOSFET, 100 V Vdss, 36 A continuous drain, 44 mOhm Rds(on) at 10 V, logic-level gate drive (4 V threshold), D2PAK package, surface mount.

$1.9200Ref. price · indicative, final on quote
Infineon Technologies IRL540NSTRRPBF datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IRL540NSTRRPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4V, 10V
Current - continuous drain (Id) @ 25°C36A (Tc)
Power dissipation3.8W (Ta), 140W (Tc)
PackageTape & Reel (TR)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs44mOhm @ 18A, 10V
Gate charge (Qg) (Max) @ vgs74 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds1800 pF @ 25 V

Product details

Why the logic-level gate drive matters for your BOM

Its headline feature is the logic-level gate drive: the maximum Rds(on) of 44 mOhm is specified at 10 V gate drive, but the part is fully enhanced with a gate-source voltage as low as 4 V (the drive voltage range for max and min Rds(on) is 4 V to 10 V).

That figure sets the conduction loss for a given load: at 18 A, expect about 0.8 W dissipation from Rds(on) alone, before switching losses. The 74 nC gate charge at 5 V tells you the driver needs to source and sink that charge each cycle — factor that into your gate-drive power budget if you are switching above 100 kHz. The input capacitance of 1800 pF at 25 V drain-source is moderate; a standard totem-pole driver handles it without excessive ringing.

Without adequate thermal management, the junction temperature limits the usable continuous current well below the 36 A headline. The D2PAK footprint is standard for 100 V-class MOSFETs; layout notes: keep the gate trace short and route the drain tab with a wide copper pour.

For production runs, the active status gives confidence for long-term BOM planning — no last-time-buy scramble expected.

Frequently asked questions

What is the Rds(on) of IRL540NSTRRPBF at 10V?

The maximum Rds(on) is 44 mOhm at 18 A drain current with 10 V gate drive.

Is IRL540NSTRRPBF a logic-level MOSFET?

Yes. The drive voltage range for achieving max and min Rds(on) is 4 V to 10 V, meaning the gate threshold is low enough to be driven by 5 V logic or a 3.3 V output with a level translator.

Can I use IRL540NSTRRPBF as a replacement for IRF540?

The IRL540NSTRRPBF is the logic-level gate variant of the IRF540 family. It shares the same 100 V / 36 A ratings and D2PAK footprint, but the gate threshold is lower (4 V vs the IRF540's typical 10 V). It is a drop-in replacement for designs that need direct logic drive, but verify the gate charge and switching speed match your application.