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Infineon Technologies IRF640NSTRRPBF — Discrete Semiconductors

IRF640NSTRRPBF N-Channel MOSFET, 200V 18A D2PAK, Obsolete

MPNIRF640NSTRRPBF
Obsolete

IRF640NSTRRPBF, Infineon HEXFET series, N-Channel MOSFET, 200V Vdss, 18A Id, 150mOhm Rds(on) at 10V, D2PAK (TO-263), -55°C to 175°C.

$1.5700Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF640NSTRRPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C18A (Tc)
Power dissipation150W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs150mOhm @ 11A, 10V
Gate charge (Qg) (Max) @ vgs67 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1160 pF @ 25 V

Product details

The IRF640NSTRRPBF is marked obsolete by the manufacturer.

The maximum on-resistance is 150 mΩ at a gate drive of 10 V and 11 A drain current. These ratings place it in the medium-voltage, medium-current class suitable for DC-DC converters, power supplies, and motor drives where the bus voltage stays under 200 V and peak currents stay within the 18 A continuous envelope. These switching parameters determine the gate drive requirements and switching losses at frequency — a gate driver capable of sourcing and sinking the charge in the desired switching interval is needed.

D2PAK surface-mount package — design-in considerations

The part comes in a TO-263-3 (D2PAK) surface-mount package with two leads plus a tab.

Gate drive and threshold

The absolute maximum gate-source voltage is ±20 V. For logic-level drive at 5 V, the on-resistance will be higher than the 150 mΩ spec — the 10 V drive condition is the one to design around for full rated performance.

Frequently asked questions

What is the equivalent or replacement for IRF640NSTRRPBF?

Evaluation of a current-production N-channel MOSFET with these or tighter ratings is recommended for new designs.