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Infineon Technologies IRF9540NLPBF — Discrete Semiconductors

IRF9540NLPBF HEXFET P-Channel MOSFET, 100V, 23A, TO-262

MPNIRF9540NLPBF
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Infineon IRF9540NLPBF HEXFET P-Channel MOSFET, 100 V drain-to-source voltage, 23 A continuous drain current at 25°C case, 117 mOhm on-resistance at 14 A and 10 V gate drive, TO-262-3 (I²Pak) through-hole package, -55°C to 150°C junction temperature range.

$2.7200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IRF9540NLPBF specifications
ParameterValue
SeriesHEXFET®
FET typeP-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C23A (Tc)
Power dissipation3.1W (Ta), 110W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs117mOhm @ 14A, 10V
Gate charge (Qg) (Max) @ vgs110 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1450 pF @ 25 V

Product details

P-channel load switching — why this part fits

The IRF9540NLPBF is a P-channel HEXFET MOSFET from Infineon in a TO-262 through-hole package. P-channel polarity means you can switch the high side of a power rail without a charge pump — the gate is pulled low to turn it on, which simplifies the drive circuit in battery-protection, reverse-polarity protection, and load-switch applications. The 100 V Vdss rating handles 48 V telecom rails, 72 V industrial buses, and 12 V/24 V automotive systems with margin.

At lower gate voltages the Rds(on) climbs — the datasheet curve shows roughly double at 5 V, so this part is optimised for 10 V gate drive, not logic-level signals. If your microcontroller drives the gate directly through a level shifter, budget the gate charge: 110 nC at 10 V means a 1 A gate driver can switch it in about 110 ns; a weaker driver stretches the switching edge and increases crossover loss.

Maximum power dissipation is 3.1 W at ambient (Ta) and 110 W at the case (Tc) — the case rating assumes a good heatsink or metal-chassis mount through the TO-262 tab. The 150°C Tj max means you can push the part hard in a pulsed load, but continuous dissipation needs the heatsink sized to keep the junction below that ceiling.

It is a current-production Infineon part in the long-running HEXFET family, so supply is stable through standard distribution. For BOM planning, the base product number IRF9540 covers multiple package variants (TO-220, D²Pak, TO-262); the NLPBF suffix specifies the TO-262 lead-formed version with lead-free plating.

Frequently asked questions

What is the equivalent of IRF9540NLPBF?

The IRF9540NLPBF is a P-channel MOSFET in a TO-262 package. Pin-compatible alternatives in the same HEXFET family include the IRF9540NPBF (TO-220) and IRF9540NSTRLPBF (D²Pak), but the package differs — the TO-262 has long leads for through-hole mounting. For a drop-in replacement, verify the footprint matches the TO-262-3 (I²Pak) outline.