IRF530NSTRLPBF

Infineon Technologies · HEXFET® Series

IRF (Infineon) HEXFET N-Channel MOSFET, IRF530NSTRLPBF, 100 V Vdss, 17 A continuous drain, 90 mOhm Rds(on) at 10 V, D2PAK (TO-263), surface mount, -55°C to 175°C junction.

Infineon Technologies IRF530NSTRLPBF
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRF530NSTRLPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C17A (Tc)
Power dissipation3.8W (Ta), 70W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs90mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs37 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds920 pF @ 25 V

Technical details

175 °C junction — thermal headroom for tight enclosures

The junction temperature rating of 175 °C provides thermal headroom for the D2PAK in confined airflow. The 70 W power dissipation at the case versus 3.8 W at ambient makes the board copper area under the tab the dominant thermal path.

37 nC gate charge — driver sizing for switching frequency

With a total gate charge of 37 nC at 10 V, the gate-driver must supply 37 nC × fsw per switching cycle. At 100 kHz that is 3.7 mA average drive current — well within a standard MOSFET driver, but the peak current still needs to charge the 920 pF input capacitance fast enough to avoid Miller plateau dwell.

IRF530NSTRLPBF
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