The IRF530NSTRLPBF is an N-channel HEXFET MOSFET from Infineon, rated for a drain-to-source voltage of 100 V and a continuous drain current of 17 A at 25 °C case temperature.
175 °C junction — thermal headroom for tight enclosures
The junction temperature rating of 175 °C provides thermal headroom for the D2PAK in confined airflow. The 70 W power dissipation at the case versus 3.8 W at ambient makes the board copper area under the tab the dominant thermal path.
37 nC gate charge — driver sizing for switching frequency
With a total gate charge of 37 nC at 10 V, the gate-driver must supply 37 nC × fsw per switching cycle. At 100 kHz that is 3.7 mA average drive current — well within a standard MOSFET driver, but the peak current still needs to charge the 920 pF input capacitance fast enough to avoid Miller plateau dwell.