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Infineon Technologies IRF530NSTRLPBF

IRF530NSTRLPBF N-Channel MOSFET, 100V 17A D2PAK

MPNIRF530NSTRLPBF
End of Life

IRF (Infineon) HEXFET N-Channel MOSFET, IRF530NSTRLPBF, 100 V Vdss, 17 A continuous drain, 90 mOhm Rds(on) at 10 V, D2PAK (TO-263), surface mount, -55°C to 175°C junction.

$1.49Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF530NSTRLPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C17A (Tc)
Power dissipation3.8W (Ta), 70W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs90mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs37 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds920 pF @ 25 V

Product details

175 °C junction — thermal headroom for tight enclosures

The junction temperature rating of 175 °C provides thermal headroom for the D2PAK in confined airflow. The 70 W power dissipation at the case versus 3.8 W at ambient makes the board copper area under the tab the dominant thermal path.

37 nC gate charge — driver sizing for switching frequency

With a total gate charge of 37 nC at 10 V, the gate-driver must supply 37 nC × fsw per switching cycle. At 100 kHz that is 3.7 mA average drive current — well within a standard MOSFET driver, but the peak current still needs to charge the 920 pF input capacitance fast enough to avoid Miller plateau dwell.

Frequently asked questions

What is the Rds(on) of IRF530NSTRLPBF?

Maximum on-resistance is 90 mOhm at 9 A drain current with 10 V gate drive. This is the conduction-loss figure for a switching or linear application at that bias point.