Infineon HEXFET® IRF540NSTRLPBF, N-Channel MOSFET, 100 V Vdss, 33 A Id, 44 mOhm Rds(on) at 10 V, D2PAK (TO-263) surface mount, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 33A (Tc) |
| Power dissipation | 130W (Tc) |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 44mOhm @ 16A, 10V |
| Gate charge (Qg) (Max) @ vgs | 71 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1960 pF @ 25 V |
The IRF540NSTRLPBF: Rds(on) is 44 mOhm at 16 A, 10 V gate drive.
Gate charge is 71 nC at 10 V. Input capacitance is 1960 pF at 25 V. Gate threshold is 4 V max at 250 µA. Drive at 10 V for minimum Rds(on). Vgs max is ±20 V.
This is the spec used for conduction loss calculations in power supply and motor drive designs.