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Infineon Technologies IRF540ZSTRL — Discrete Semiconductors

IRF540ZSTRL HEXFET N-Channel MOSFET, 100V 36A D2PAK

MPNIRF540ZSTRL
Obsolete

IRF540ZSTRL, Infineon HEXFET® N-Channel MOSFET, 100 V Vdss, 36 A Id, 26.5 mOhm Rds(on) at 22 A, 10 V gate drive, TO-263-3 D2PAK surface mount, -55°C to 175°C junction temperature.

$1.5200Ref. price · indicative, final on quote
Infineon Technologies IRF540ZSTRL datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF540ZSTRL specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C36A (Tc)
Power dissipation92W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs26.5mOhm @ 22A, 10V
Gate charge (Qg) (Max) @ vgs63 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1770 pF @ 25 V

Product details

The IRF540ZSTRL is an Infineon HEXFET® N-channel power MOSFET in a surface-mount D2PAK (TO-263) package.

Obsolete — sourcing the IRF540ZSTRL today

The IRF540ZSTRL is marked obsolete by the manufacturer. If the design can accommodate a pin-compatible drop-in, the IRF540Z (non-Z, non-STRL suffix) is a common cross-shop candidate, though the buyer should verify the parametric differences against their operating point.

The D2PAK (TO-263) surface-mount package has a large exposed tab that carries the drain current and serves as the primary thermal path. Maximum power dissipation is 92 W at case temperature, so the PCB copper area and thermal vias under the tab must be sized for the expected conduction losses.

Frequently asked questions

Where can I buy IRF540ZSTRL available via RFQ confirmation?

The IRF540ZSTRL is an obsolete part, so it is not stocked in factory channels.