100 V, 36 A N-channel HEXFET in D2PAK
The Infineon IRL540NSTRLPBF is a 100 V, 36 A N-channel power MOSFET from the HEXFET series, housed in a D2PAK (TO-263) surface-mount package. The 100 V drain-source rating clears 48 V, 72 V, and 96 V battery stacks with margin, making this part a candidate for motor drives, DC-DC converters, and power OR-ing in industrial and automotive auxiliary systems.
Conduction and switching loss budget
The 44 mOhm Rds(on) at 10 V drive sets the conduction loss at 18 A to about 14.3 W (I²R). At 175°C junction, the on-resistance roughly doubles from the 25°C value, so the designer must derate the continuous current or increase the heatsink area on the D2PAK tab. Gate charge is 74 nC at 5 V. Input capacitance Ciss is 1800 pF at 25 V drain-source. This moderate capacitance means the gate-drive loop inductance and resistance need careful layout to avoid ringing, but the part does not require a high-current gate driver.
The datasheet specifies 3.8 W dissipation at 25°C ambient with no heatsink (junction-to-ambient), and 140 W at 25°C case temperature with an infinite heatsink. The actual continuous current the part can carry depends on the copper area on the drain tab and the airflow over the board. Mounting is surface-mount; the tab is soldered to a copper pad on the PCB. The gate-drive voltage range is 4 V to 10 V for rated Rds(on).
The 175°C maximum junction allows headroom for self-heating in high-current applications.
This is the standard ordering code for volume production.