IRF540ZSTRR, Infineon HEXFET series, N-Channel MOSFET, 100 V Vdss, 36 A Id, 26.5 mOhm Rds(on) at 10 V, 63 nC Qg, TO-263-3 (D2PAK), -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 36A (Tc) |
| Power dissipation | 92W (Tc) |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Tape & Reel (TR) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 26.5mOhm @ 22A, 10V |
| Gate charge (Qg) (Max) @ vgs | 63 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1770 pF @ 25 V |
The IRF540ZSTRR: The 63 nC total gate charge at 10 V and 1770 pF input capacitance at 25 V drain bias define the switching drive requirements.
The IRF540ZSTRR is listed as obsolete.
Actual on-resistance rises with temperature. Maximum power dissipation is 92 W at case temperature, derated linearly above 25 °C.
The maximum on-resistance is 26.5 mOhm at 22 A drain current and 10 V gate drive. This is specified at 25 °C junction temperature; Rds(on) increases with temperature per the normalised curve in the datasheet.