IRF520NPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET series, IRF520NPBF, N-Channel MOSFET, 100 V Vdss, 9.7 A continuous drain, 200 mOhm Rds(on) at 10 V, TO-220-3 through-hole package, -55°C to 175°C junction temperature.

Infineon Technologies IRF520NPBF
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Technical specifications

IRF520NPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9.7A (Tc)
Power dissipation48W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs200mOhm @ 5.7A, 10V
Gate charge (Qg) (Max) @ vgs25 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds330 pF @ 25 V

Technical details

100 V, 9.7 A N-channel switch in TO-220

The IRF520NPBF: The TO-220-3 through-hole package keeps the part board-mountable with a single screw tab for heatsinking.

The gate threshold is specified at 4 V maximum with 250 µA drain current, but the Rds(on) is characterised at 10 V drive — this is not a logic-level FET.

Thermal and environmental reach

That 175°C ceiling suits environments where the heatsink is marginal or the ambient runs hot — motor drives in enclosures, engine-bay auxiliaries, or power supplies with constrained airflow. Maximum power dissipation is 48 W at the case, but derating above 25°C is aggressive; a real design budgets for the thermal resistance of the heatsink interface.

IRF520NPBF
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