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Infineon Technologies IRF9540NPBF — Discrete Semiconductors

IRF9540NPBF P-Channel MOSFET, 100 V, 23 A, TO-220AB

MPNIRF9540NPBF
Active

Infineon IRF9540NPBF HEXFET P-Channel MOSFET, 100 V Vdss, 23 A Id, 117 mOhm Rds(on) at 10 V, 97 nC Qg, TO-220AB, -55 to 150 °C.

$0.42744Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IRF9540NPBF specifications
ParameterValue
SeriesHEXFET®
FET typeP-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C23A (Tc)
Power dissipation140W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs117mOhm @ 11A, 10V
Gate charge (Qg) (Max) @ vgs97 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1300 pF @ 25 V

Product details

The IRF9540NPBF: On-resistance is 117 mOhm maximum at 11 A with 10 V gate drive. The 140 W power dissipation rating can handle the conduction loss with an adequate heatsink. Gate charge totals 97 nC at 10 V, and input capacitance is 1300 pF at 25 V — a moderate drive requirement that a standard gate-driver IC or a discrete totem-pole can meet for switching frequencies up to a few tens of kHz.

The TO-220AB package with a metal tab allows direct heatsink mounting; the 140 W dissipation ceiling assumes the case is held at 25 °C — real-world derating follows the thermal resistance junction-to-case.

Frequently asked questions

What is the Rds(on) of IRF9540NPBF?

The maximum Rds(on) is 117 mOhm at 11 A drain current with 10 V gate drive, specified at 25 °C junction temperature.