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Infineon Technologies IRL540NSTRL — Discrete Semiconductors

IRL540NSTRL N-Channel MOSFET, 100 V, 44 mOhm, D2PAK

MPNIRL540NSTRL
Obsolete

IRL540NSTRL, N-Channel MOSFET, 100 V drain-source voltage, 36 A continuous drain current, 44 mOhm on-resistance at 10 V gate drive, logic-level gate threshold, D2PAK (TO-263) surface-mount package, Cut Tape.

$1.8358Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRL540NSTRL specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Current - continuous drain (Id) @ 25°C36A (Tc)
PackageCut Tape (CT)
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs44mOhm @ 18A, 10V
Gate charge (Qg) (Max) @ vgs74 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds1800 pF @ 25 V

Product details

If the design can accommodate a pin-compatible alternative, the IRL540N (in D2PAK) is the same die in a different packaging variant and may be cross-shopped, but no direct replacement is guaranteed without verifying the gate charge and thermal performance against the original spec.

The 44 mOhm Rds(on) at 10 V gate drive sets the conduction loss: at 18 A, that is about 14 W dissipation in the channel, which the D2PAK tab must sink to a thermal plane. The 74 nC gate charge at 5 V is moderate — a 10 V gate drive with a 1 A source/sink driver switches it in roughly 74 ns, but the input capacitance of 1800 pF at 25 V drain-source means the driver sees a capacitive load that rises with drain voltage. The 2 V gate threshold ensures the device is fully enhanced with 3.3 V logic, but the Rds(on) at 4.5 V gate drive will be higher than the 44 mOhm figure — the datasheet curve (not reproduced here) typically shows a 1.5x to 2x increase below 5 V. For designs running from a 5 V rail, the logic-level threshold is a real advantage; for 3.3 V systems, verify the on-resistance at the actual gate voltage against the thermal budget.

Frequently asked questions

What is the replacement for IRL540NSTRL?

The IRL540N (in D2PAK) is the same die in a different packaging variant and may be a candidate, but pin compatibility and thermal performance must be verified against the original design. For a drop-in replacement, sourcing the IRL540NSTRL through independent distribution is the direct path.

What is the Rds(on) of IRL540NSTRL?

The maximum on-resistance is 44 mOhm at 18 A drain current and 10 V gate drive.

What is the gate charge of IRL540NSTRL?

The maximum total gate charge is 74 nC at 5 V gate-source voltage. This is a moderate figure; a gate driver with 1 A source/sink capability can switch it in roughly 74 ns, but the input capacitance of 1800 pF at 25 V drain-source adds to the driver load.