IRF540Z, N-Channel MOSFET, HEXFET® Series, 100V Vdss, 36A Id, 26.5mOhm Rds(on) at 10V, 63nC Qg, TO-220-3, Through Hole, -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 36A (Tc) |
| Power dissipation | 92W (Tc) |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 26.5mOhm @ 22A, 10V |
| Gate charge (Qg) (Max) @ vgs | 63 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1770 pF @ 25 V |
The IRF540Z is listed as obsolete by the manufacturer.
The TO-220-3 (supplier package TO-220AB) is a standard through-hole package that mounts into a 0.1-inch pitch PCB or a heatsink with a single screw hole.
For a drop-in substitute, search for 100 V N-channel TO-220 MOSFETs with similar Rds(on) (26.5 mOhm at 10 V) and gate charge (63 nC). The IRF540N is a common cross-shop candidate in the same voltage class, but verify pin compatibility and parametric fit against your specific drive voltage and switching frequency.