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Infineon Technologies IRF640NLPBF — Discrete Semiconductors

IRF640NLPBF HEXFET N-Channel MOSFET, 200V 18A 150mOhm

MPNIRF640NLPBF
Last Buy

Infineon IRF640NLPBF, HEXFET® Series, N-Channel MOSFET, 200 V Vdss, 18 A Id, 150 mOhm Rds(on) @ 11 A 10 V, TO-262-3 Long Leads I²Pak TO-262AA, Through Hole, -55°C to 175°C.

$1.7800Ref. price · indicative, final on quote
Infineon Technologies IRF640NLPBF datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF640NLPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C18A (Tc)
Power dissipation150W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs150mOhm @ 11A, 10V
Gate charge (Qg) (Max) @ vgs67 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1160 pF @ 25 V

Product details

200 V, 18 A, 150 mOhm — the ratings that define the slot

The Infineon IRF640NLPBF is an N-channel HEXFET power MOSFET in a TO-262 through-hole package.

Gate charge and capacitance — what the driver sees

Package and mounting — through-hole in a TO-262

The TO-262 (I²Pak) package is a through-hole variant with three long leads, designed for vertical mounting on a PCB. It is mechanically similar to a TO-220 but with a shorter tab and a different lead form — verify the hole pattern and lead spacing against your existing footprint. The supplier device package is TO-262, and the case code is TO-262AA. Store the reels dry — MSL is not stated, but assume standard moisture sensitivity for a plastic-encapsulated power device.

Frequently asked questions

Is IRF640NLPBF obsolete?

The IRF640NLPBF carries a Last Buy lifecycle status, meaning Infineon is taking final orders within a defined window. After that window closes, it will only be available through surplus and independent channels. Secure your last-time-buy quantity now or plan a replacement qualification.

What is the replacement for IRF640NLPBF?

A replacement would need to be a TO-262 N-channel MOSFET rated for at least 200 V Vdss, 18 A Id, and 150 mOhm Rds(on) max at 10 V gate drive. Validate the pinout and thermal performance before substituting.