Infineon HEXFET® IRF540ZS, N-Channel MOSFET, 100 Vdss, 36 A continuous drain, 26.5 mOhm Rds(on) at 10 V, TO-263-3 D2PAK surface mount, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 36A (Tc) |
| Power dissipation | 92W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 26.5mOhm @ 22A, 10V |
| Gate charge (Qg) (Max) @ vgs | 63 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1770 pF @ 25 V |
The Infineon IRF540ZS is a 100 V, 36 A N-channel power MOSFET from the HEXFET series, built on planar stripe technology.
The 63 nC total gate charge at 10 V is modest for a 36 A device, meaning the gate driver doesn't need to supply a huge peak current for fast switching. The input capacitance of 1770 pF at 25 V drain-source is a typical figure for this class — plan for a gate resistor to manage ringing if the layout is tight.
No official replacement order code is recorded in the lifecycle data for the IRF540ZS. For a drop-in alternative, look for a 100 V, 36 A N-channel MOSFET in D2PAK with similar Rds(on) and gate charge — parametric search tools on distributor sites can identify candidates. The IRF540ZS itself remains available through surplus channels for legacy BOM support.