Infineon Technologies HEXFET® series, N-Channel MOSFET, 200 V Vdss, 18 A Id, TO-262-3 Long Leads I²Pak package, Tube.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 18A (Tc) |
| Power dissipation | 150W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 150mOhm @ 11A, 10V |
| Gate charge (Qg) (Max) @ vgs | 67 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1160 pF @ 25 V |
The IRF640NL: Housed in a TO-262-3 (I²Pak) through-hole package, it suits designs where a TO-220's tab would be too large or a surface-mount D²Pak is impractical for hand-soldering or prototyping.
Gate charge totals 67 nC at 10 V, so a gate driver sourcing 1 A can switch the FET in about 67 ns, though the input capacitance of 1160 pF at 25 V drain sets the real-world rise time.
No official pin-compatible alternative is listed by Infineon. A parametric search for an N-channel MOSFET in a TO-262 package with 200 V Vdss and similar Rds(on) is the practical path for a replacement.
The evidence does not list specific compliance documentation (RoHS, REACH, UL, IEC) for this part. Standard Infineon HEXFET® MOSFETs are typically RoHS-compliant, but confirm at order.