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Infineon Technologies IRF540ZL — Discrete Semiconductors

IRF540ZL N-Channel MOSFET, 100V 36A TO-262, 26.5mΩ

MPNIRF540ZL
Obsolete

IRF540ZL, International Rectifier HEXFET® N-Channel MOSFET, 100 V Vdss, 36 A continuous drain, 26.5 mΩ Rds(on) at 22 A, 63 nC gate charge, TO-262-3 (I²Pak) through-hole package.

$1.7600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF540ZL specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C36A (Tc)
Power dissipation92W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs26.5mOhm @ 22A, 10V
Gate charge (Qg) (Max) @ vgs63 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1770 pF @ 25 V

Product details

The IRF540ZL is an International Rectifier HEXFET® N-channel power MOSFET in a TO-262 through-hole package.

For an existing BOM, verify the replacement's Rds(on) and gate charge against your thermal and switching budget before committing.

Thermal and mounting — through-hole TO-262

The TO-262 (I²Pak) package is a through-hole variant with long leads, designed for heatsink mounting through the tab. Maximum power dissipation is 92 W at case temperature — that figure assumes an infinite heatsink; real-world derating follows the junction-to-case thermal resistance. For a 36 A continuous load, the tab must be bolted to a heatsink with adequate thermal interface material; free-air operation is limited to much lower current.

Frequently asked questions

What is the replacement for IRF540ZL?

For a new design, evaluate active 100 V N-channel MOSFETs in TO-220 or D²Pak from the same HEXFET family, but verify pin compatibility — the TO-262 lead form is unique.