100 V N-channel HEXFET in TO-263 — switching and thermal design
The TO-263-3 (D²Pak) package with a PG-TO263-3 supplier code is a surface-mount variant of the industry-standard TO-220 footprint, with the tab as the drain connection.
The BOM position must be filled from surplus or broker-channel inventory. For a production run, the buyer should qualify a pin-compatible replacement from the same HEXFET family or an alternative N-channel 100 V, 36 A class MOSFET in TO-263. The 26.5 mOhm Rds(on) and 63 nC gate charge are the parametric targets for a drop-in thermal and switching match.
The 100 V drain-source voltage rating provides 33 % headroom on a 75 V bus and comfortable margin for 48 V telecom or 72 V nominal battery systems. At 22 A, I²R loss is 12.8 W — the 92 W power dissipation ceiling means the device can handle this continuously only if the case is held near 25°C.