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Infineon Technologies IRF540NSPBF — Discrete Semiconductors

IRF540NSPBF N-Channel HEXFET MOSFET, 100V 33A 44mOhm D2PAK

MPNIRF540NSPBF
End of Life

Infineon IRF540NSPBF, HEXFET series, N-Channel MOSFET, 100V Vdss, 33A continuous drain, 44mOhm Rds(on) at 10V gate drive, D2PAK surface-mount, -55 to 175°C junction temperature.

$1.6000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IRF540NSPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C33A (Tc)
Power dissipation130W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs44mOhm @ 16A, 10V
Gate charge (Qg) (Max) @ vgs71 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1960 pF @ 25 V

Product details

100 V, 33 A, 44 mOhm — the power-switch parametric envelope

The IRF540NSPBF is an N-channel enhancement-mode MOSFET from Infineon's HEXFET series, built on a planar stripe-gate process. At 16 A load, I²R loss is about 11.3 W at the hot junction — the D2PAK tab must be soldered to a sufficient copper area on the PCB to keep the junction below 175°C.

Total gate charge is 71 nC at 10 V. A gate driver sourcing 1 A can charge the gate in about 71 ns, but the practical switching speed is limited by the driver's peak current and the gate loop inductance. If the PWM controller or driver only outputs 5 V, the on-resistance will be higher than the 44 mOhm spec — budget for the increase from the typical Rds(on) vs Vgs curve.

D2PAK footprint and thermal path

The ±20 V maximum gate-source voltage is a hard limit; a zener clamp on the gate is cheap insurance against ringing.

Frequently asked questions

What is the difference between IRF540N and IRF540NSPBF?

The IRF540NSPBF is the surface-mount D2PAK variant of the IRF540N, which is the through-hole TO-220 version. The die and electrical specifications — 100 V Vdss, 33 A Id, 44 mOhm Rds(on) — are identical between the two. The package is the only difference: D2PAK for reflow assembly versus TO-220 for through-hole soldering or socket mounting.