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Infineon Technologies IRF640NSTRLPBF — Discrete Semiconductors

IRF640NSTRLPBF MOSFET, N-Channel 200V 18A D2PAK

MPNIRF640NSTRLPBF
Active

Infineon HEXFET® IRF640NSTRLPBF, N-Channel MOSFET, 200 V Vdss, 18 A Id, 150 mOhm Rds(on) at 11 A, 10 V, 67 nC gate charge, D2PAK package, -55°C to 175°C.

$1.5700Ref. price · indicative, final on quote
Infineon Technologies IRF640NSTRLPBF datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IRF640NSTRLPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C18A (Tc)
Power dissipation150W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs150mOhm @ 11A, 10V
Gate charge (Qg) (Max) @ vgs67 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1160 pF @ 25 V

Product details

The 150 mOhm Rds(on) at 11 A, 10 V gate drive sets the conduction loss floor — at 11 A that is about 18 W, so the D2PAK tab needs a decent copper pour or a heatsink to keep junction under 175°C.

Switching and drive — the numbers that matter

Gate charge is 67 nC at 10 V. Input capacitance is 1160 pF at 25 V drain-source, which keeps the Miller plateau manageable for most controllers. Threshold voltage is 4 V max at 250 µA drain current. The ±20 V gate-source max gives headroom for ringing on long PCB traces.

Active production, ROHS3, D2PAK package

ROHS3 compliant. Power dissipation is 150 W at case temperature — derate above 25°C per the datasheet curve.

Frequently asked questions

Is IRF640NSTRLPBF RoHS compliant?

Yes, it is ROHS3 compliant.