P-Channel 100 V HEXFET in D2PAK
The Infineon IRF9540NSPBF is a P-Channel enhancement-mode MOSFET from the HEXFET series, built with planar stripe technology. The P-Channel polarity simplifies high-side load switching — no charge pump needed — which is why you see these in battery protection, reverse-polarity blocking, and 48 V telecom hot-swap circuits.
That's moderate for a 100 V P-Channel: the gate driver needs to source and sink enough peak current to hit your switching target without excessive crossover loss.
Thermal and power dissipation
Power dissipation is rated 3.1 W at 25°C ambient (still air) and 110 W at 25°C case temperature. The wide gap tells you this part lives or dies by its thermal interface — the D2PAK tab must be soldered to a sufficient copper area, ideally with thermal vias to inner layers. For a 23 A load, the 117 mΩ Rds(on) produces about 38 W conduction loss at full current; that's within the case-rated 110 W but demands serious heatsinking. In practice, derate for ambient temperature and switching losses.
RoHS compliance is indicated by the 'PBF' suffix (lead-free).
