HEXFET N-channel at 100 V, 36 A — the switching workhorse
The Infineon IRL540NSTRR is a 100 V, 36 A N-channel MOSFET from the HEXFET series, built on planar stripe technology. It comes in a TO-263-3 D2PAK surface-mount package with a large tab for heat sinking. The 2 V max gate threshold means a 5 V logic signal can fully turn it on, so no separate gate-driver rail is needed in many designs. With a junction temperature range from -55°C to 175°C, it handles the thermal cycling of industrial and automotive environments. The 74 nC gate charge at 5 V is moderate — a standard gate-driver IC can switch it in the tens of kilohertz without excessive drive loss.
For existing designs, the only supply channel is the independent distribution market — surplus, overstock, or verified pull inventory. Each unit must be date-code traced and tested for authenticity, since the risk of counterfeit or re-marked parts rises once a device leaves the authorized factory pipeline. The closest functional alternative within the same voltage and current class would be a current-production 100 V N-channel in D2PAK with similar Rds(on) and gate threshold — but pin-compatibility should be verified against the original footprint and driver circuit.
The 44 mOhm Rds(on) at 18 A, 10 V sets the conduction loss at full load. That heat must be sunk through the D2PAK tab to a copper plane or heatsink. The 74 nC gate charge at 5 V means a 1 A gate driver can charge the gate in about 74 ns, enabling switching frequencies up to several hundred kilohertz before gate-drive losses become significant.
Because the IRL540NSTRR is obsolete, we source it through our independent supply network — verified surplus, overstock, and qualified pull inventory. Each lot is inspected for marking consistency, date-code traceability, and electrical test against the original datasheet limits. No stock or lead-time number is published because the supply is dynamic; the RFQ is the only reliable way to commit a BOM line.