Infineon HEXFET® IRF540NPBF, N-Channel MOSFET, 100 V Vdss, 33 A Id, 44 mOhm Rds(on) @ 16 A 10 V, 71 nC Qg, TO-220-3, -55 to 175 °C.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 33A (Tc) |
| Power dissipation | 130W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 44mOhm @ 16A, 10V |
| Gate charge (Qg) (Max) @ vgs | 71 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1960 pF @ 25 V |
Total gate charge is 71 nC at 10 V, which sets the gate-drive energy per switching cycle.
The 130 W power dissipation at case temperature is derated above 25 °C; the TO-220 tab must be bolted to a heatsink to approach that limit in continuous operation.
The IRF540NPBF is the lead-free (PbF) version of the original IRF540N. The electrical specifications — 100 V Vdss, 33 A Id, 44 mOhm Rds(on) — are identical. The 'PBF' suffix indicates ROHS3 compliance; the part is a drop-in replacement for the older non-PbF variant in the same TO-220 package.