Infineon HEXFET® series, IRFI540NPBF, N-Channel MOSFET, 100 V drain-to-source, 20 A continuous drain at 25°C, 52 mOhm Rds(on) at 11 A and 10 V gate drive, TO-220 Full Pack through-hole package, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 20A (Tc) |
| Power dissipation | 54W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 52mOhm @ 11A, 10V |
| Gate charge (Qg) (Max) @ vgs | 94 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1400 pF @ 25 V |
The TO-220 Full Pack (TO-220AB Full-Pak) package has a fully isolated metal tab. No mica washer or thermal compound pad needed between the tab and the heatsink — the isolation is built into the moulded body. That saves assembly time and eliminates one failure point in high-vibration environments like pumps or industrial fans.
Design engineers need pin configuration for PCB layout and circuit integration.
Sourcing buyers need to find stock and place orders quickly to maintain production.
Lifecycle status affects long-term availability and design viability for new projects.
Engineers and buyers need drop-in replacements or alternatives for supply chain flexibility.
Cost estimation is critical for BOM budgeting and procurement decisions.
Thermal management in circuit design requires knowing power dissipation limits.