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Infineon HEXFET® IRF540NPBF, N-Channel MOSFET, 100 V Vdss, 33 A Id, 44 mOhm Rds(on) @ 16 A 10 V, 71 nC Qg, TO-220-3, -55 to 175 °C.

IRF540NL, Infineon HEXFET series, N-Channel MOSFET, 100V Vdss, 33A Id, 44mOhm Rds(on) at 10V, TO-262-3 package, -55°C to 175°C operating temperature.

Infineon IRF540ZPBF, HEXFET® series N-channel MOSFET, 100V Vdss, 36A continuous drain at 25°C case, 26.5mOhm Rds(on) at 22A/10V, 63nC gate charge, TO-220AB through-hole package, -55 to 175°C junction temperature.

Infineon HEXFET series, IRF520NPBF, N-Channel MOSFET, 100 V Vdss, 9.7 A continuous drain, 200 mOhm Rds(on) at 10 V, TO-220-3 through-hole package, -55°C to 175°C junction temperature.

IRF530NPBF, HEXFET® N-Channel MOSFET, 100 V Vdss, 17 A continuous drain, 90 mOhm Rds(on) at 10 V, 37 nC gate charge, TO-220AB through-hole package, -55°C to 175°C junction temperature.

Infineon IRF9540NPBF HEXFET P-Channel MOSFET, 100 V Vdss, 23 A Id, 117 mOhm Rds(on) at 10 V, 97 nC Qg, TO-220AB, -55 to 150 °C.

Infineon HEXFET® series, IRFI540NPBF, N-Channel MOSFET, 100 V drain-to-source, 20 A continuous drain at 25°C, 52 mOhm Rds(on) at 11 A and 10 V gate drive, TO-220 Full Pack through-hole package, -55°C to 175°C junction temperature.

IRL540NPBF, Infineon HEXFET® series, N-Channel MOSFET, 100V Vdss, 36A Id, 44mOhm Rds(on) at 10V Vgs, TO-220-3, Through Hole, -55°C~175°C.

Infineon IRF540NLPBF, HEXFET® Series, N-Channel MOSFET, 100 V Drain-Source, 33 A Continuous Drain, 44 mΩ Rds(on) @ 16 A, 10 V, TO-262-3 Long Leads (I²Pak), Through Hole, -55°C to 175°C.

Infineon IRF540NSPBF, HEXFET series, N-Channel MOSFET, 100V Vdss, 33A continuous drain, 44mOhm Rds(on) at 10V gate drive, D2PAK surface-mount, -55 to 175°C junction temperature.

Infineon IRF9540NLPBF HEXFET P-Channel MOSFET, 100 V drain-to-source voltage, 23 A continuous drain current at 25°C case, 117 mOhm on-resistance at 14 A and 10 V gate drive, TO-262-3 (I²Pak) through-hole package, -55°C to 150°C junction temperature range.

Infineon HEXFET® IRF9540NSPBF, P-Channel MOSFET, 100 V Vdss, 23 A Id, 117 mΩ Rds(on) at 10 V, D2PAK (TO-263), -55°C to 150°C.

Infineon HEXFET® IRF640NSTRLPBF, N-Channel MOSFET, 200 V Vdss, 18 A Id, 150 mOhm Rds(on) at 11 A, 10 V, 67 nC gate charge, D2PAK package, -55°C to 175°C.

IRF540ZSTRR, Infineon HEXFET series, N-Channel MOSFET, 100 V Vdss, 36 A Id, 26.5 mOhm Rds(on) at 10 V, 63 nC Qg, TO-263-3 (D2PAK), -55°C to 175°C.

Infineon HEXFET IRFP140NPBF, N-Channel MOSFET, 100 V Vdss, 33 A Id at 25 °C, 52 mOhm Rds(on) at 10 V, TO-247-3 through-hole package, -55 °C to 175 °C junction temperature.

IRF630NPBF, HEXFET® N-Channel MOSFET, 200 V drain-source, 9.3 A continuous drain current, 300 mOhm Rds(on) at 10 V gate drive, 35 nC gate charge, TO-220AB through-hole, -55°C to 175°C junction temperature.

Infineon HEXFET IRFZ44NPBF, N-Channel MOSFET, 55 V Vdss, 49 A continuous drain, 17.5 mOhm Rds(on) at 10 V, TO-220-3 through-hole package, -55°C to 175°C junction temperature.

IRFZ48NPBF, HEXFET® N-Channel MOSFET, 55V Vdss, 64A Id, 14mOhm Rds(on) at 10V, 81nC gate charge, TO-220AB, -55°C to 175°C.

IRF9530NPBF, HEXFET P-Channel MOSFET, 100 V drain-source, 14 A continuous drain, 200 mOhm Rds(on) at 10 V, TO-220AB, -55°C to 175°C junction.

Infineon HEXFET® N-Channel MOSFET, 100V Vdss, 10A Id, 180mOhm Rds(on) at 10V Vgs, 20nC gate charge, TO-220AB through-hole package, -55°C to 175°C junction temperature.

Infineon HEXFET® IRF1405PBF, N-Channel MOSFET, 55V Vdss, 169A Id, 5.3mOhm Rds(on), TO-220-3 Through Hole, -55°C to 175°C.

IRFZ46NPBF, HEXFET® Series, N-Channel MOSFET, 55V Vdss, 53A Id, 16.5mOhm Rds(on) @ 28A 10V, 72nC Qg @ 10V, -55°C to 175°C, TO-220-3 (TO-220AB), Through Hole, Tube.

Vishay IRF840APBF, N-Channel MOSFET, 500 V drain-source, 8 A continuous drain, 850 mOhm Rds(on) at 10 V, TO-220AB through-hole package, -55 to 150°C junction temperature.

Infineon HEXFET® IRF540ZSPBF, N-Channel MOSFET, 100 V Vdss, 36 A Id, 26.5 mOhm Rds(on) at 10 V, D2PAK (TO-263-3), -55°C to 175°C.

Infineon IRF640NLPBF, HEXFET® Series, N-Channel MOSFET, 200 V Vdss, 18 A Id, 150 mOhm Rds(on) @ 11 A 10 V, TO-262-3 Long Leads I²Pak TO-262AA, Through Hole, -55°C to 175°C.

Infineon IRF640NSPBF HEXFET® N-Channel MOSFET, 200 V Vdss, 18 A continuous drain, 150 mΩ Rds(on) at 10 V, D2PAK (TO-263) surface mount, -55 to 175°C junction temperature.

IRF7401PBF, Infineon HEXFET N-Channel MOSFET, 20 V Vdss, 8.7 A Id, 22 mΩ Rds(on) at 4.5 V, 8-SOIC package, -55°C to 150°C.

Infineon IRF7402PBF, HEXFET® N-Channel MOSFET, 20V Vdss, 6.8A Id, 35mOhm Rds(on) @ 4.5V, 2.5W, SO-8, -55°C to 150°C.

Infineon IRF7403PBF, N-Channel HEXFET MOSFET, 30V Vdss, 8.5A Id, 22mOhm Rds(on) at 10V, 57nC Qg, -55 to 150°C, SO-8 package.

Infineon IRF7406PBF HEXFET® P-Channel MOSFET, 30V Vdss, 5.8A Id, 45mOhm Rds(on) at 10V, 59nC Qg, SOIC-8, -55°C to 150°C.

Infineon HEXFET® series, N-Channel MOSFET, 100 V Drain to Source Voltage, 36 A Continuous Drain Current, 44 mOhm Rds On @ 18 A 10 V, Through Hole, TO-262-3 Long Leads I²Pak TO-262AA, -55°C to 175°C.

Infineon IRL540NSPBF HEXFET N-Channel MOSFET, 100V Vdss, 36A Id, 44mOhm Rds On at 18A 10V, logic-level gate, D2PAK surface mount, -55°C to 175°C.

Infineon / International Rectifier HEXFET P-Channel MOSFET, IRF9530NSTRLPBF, 100 V Vdss, 14 A Id, 200 mOhm Rds(on) at 10 V, 58 nC Qg, D2PAK (TO-263) surface mount, -55 to 175 °C.

Infineon HEXFET® IRFZ24NPBF, N-Channel MOSFET, 55 V Vdss, 17 A Id, 70 mOhm Rds(on) at 10 V, 45 W, TO-220-3, -55°C to 175°C.

Infineon HEXFET® P-Channel MOSFET, 55V Vdss, 31A Id, 60mOhm Rds(on) at 10V, D2PAK (TO-263) surface mount, -55°C to 175°C junction temperature, ROHS3 compliant.

Infineon IRFZ44VSTRR HEXFET® N-Channel MOSFET, 60V Vdss, 55A continuous drain, 16.5 mOhm RDS(on) at 10V, D2PAK (TO-263) surface-mount package, -55°C to 175°C junction temperature.

Infineon IRF7403TR, N-Channel HEXFET® MOSFET, 30 V Vdss, 8.5 A Id, 22 mOhm Rds(on) at 4 A, 10 V, 57 nC Qg, 1200 pF Ciss, SOIC-8, -55°C to 150°C.

Infineon HEXFET® series, IRFZ44NLPBF, N-Channel MOSFET, 55 V drain-source, 49 A continuous, 17.5 mΩ Rds(on) at 10 V, TO-262 through-hole, -55 to 175 °C junction.