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IRF7401PBF

IRF7401PBF HEXFET N-Channel MOSFET, 20V, 8.7A, 8-SOIC

MPNIRF7401PBF
End of Life

IRF7401PBF, Infineon HEXFET N-Channel MOSFET, 20 V Vdss, 8.7 A Id, 22 mΩ Rds(on) at 4.5 V, 8-SOIC package, -55°C to 150°C.

$0.8900Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IRF7401PBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.7V, 4.5V
Current - continuous drain (Id) @ 25°C8.7A (Ta)
Power dissipation2.5W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±12V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id700mV @ 250µA (Min)
Rds on (Max) @ id, vgs22mOhm @ 4.1A, 4.5V
Gate charge (Qg) (Max) @ vgs48 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1600 pF @ 15 V

Product details

Typical applications include load switching, battery protection circuits, DC-DC converter primary-side switches, and low-voltage power management in portable and industrial equipment.

Gate drive and Rds(on) — the logic-level reality

The IRF7401PBF specifies a drive voltage range of 2.7 V (minimum for achieving the rated Rds(on)) to 4.5 V (the voltage at which the 22 mΩ maximum is guaranteed). At 4.5 V, the gate charge is 48 nC, so a 3.3 V logic output from an MCU or FPGA will not fully enhance the channel — you need a gate driver or a 5 V-tolerant GPIO to hit the 4.5 V sweet spot. The maximum gate-source voltage is ±12 V, giving headroom for a 5 V rail but not for a 12 V bootstrap supply without a zener clamp.

Thermal and package constraints

Maximum power dissipation is 2.5 W at 25°C ambient (Ta) in the SO-8 package. That limits continuous current to about 3.5 A at 22 mΩ before the junction hits 150°C in still air — the 8.7 A rating assumes ideal heat sinking or pulsed operation. The input capacitance is 1600 pF at 15 V Vds, which is moderate; switching losses at frequencies above 500 kHz start to dominate, so this part is better suited to 100–300 kHz converters or load-switch duty cycles.

Frequently asked questions

What is the replacement for IRF7401PBF?

No official replacement is listed. The part is active and in production, so no replacement is needed. For a second-source option, look for a pin-compatible N-channel MOSFET with similar 20 V Vdss and 22 mΩ Rds(on) ratings in an SO-8 package.