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Infineon Technologies IRFZ44NPBF — Discrete Semiconductors

IRFZ44NPBF HEXFET N-Channel MOSFET, 55V 49A TO-220

MPNIRFZ44NPBF
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Infineon HEXFET IRFZ44NPBF, N-Channel MOSFET, 55 V Vdss, 49 A continuous drain, 17.5 mOhm Rds(on) at 10 V, TO-220-3 through-hole package, -55°C to 175°C junction temperature.

$0.34035Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IRFZ44NPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C49A (Tc)
Power dissipation94W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs17.5mOhm @ 25A, 10V
Gate charge (Qg) (Max) @ vgs63 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1470 pF @ 25 V

Product details

55 V, 49 A, 17.5 mOhm — the TO-220 workhorse for 48 V and 12 V loads

The 55 V Vdss places it in the 48 V bus / automotive 12 V load-switch class — not a high-voltage flyback device. The 49 A continuous rating assumes the TO-220AB case is bolted to a heatsink; at elevated ambient the current must be derated per the thermal impedance curve.

Total gate charge Qg is 63 nC at 10 V. Input capacitance Ciss is 1470 pF at 25 V drain-source.

175 °C junction — military-grade thermal headroom

The 175 °C Tj max is unusual for a TO-220 MOSFET and signals suitability for high-reliability environments: under-hood automotive, industrial motor drives, and avionics where the die must survive brief overloads without immediate failure. Power dissipation is rated at 94 W at case temperature Tc=25 °C. The TO-220AB package with a copper tab allows bolting to a heatsink; the actual dissipation limit depends on the thermal resistance of the mounting interface.

It is ROHS3 compliant.

Frequently asked questions

What is the IRFZ44NPBF's gate threshold voltage?

The maximum gate threshold voltage Vgs(th) is 4 V at 250 µA drain current. The recommended drive voltage for achieving the rated Rds(on) is 10 V.