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Infineon Technologies IRL520NPBF
Infineon Technologies

IRL520NPBF HEXFET N-Channel MOSFET, 100V 10A TO-220AB

MPNIRL520NPBF
End of Life

Infineon HEXFET® N-Channel MOSFET, 100V Vdss, 10A Id, 180mOhm Rds(on) at 10V Vgs, 20nC gate charge, TO-220AB through-hole package, -55°C to 175°C junction temperature.

$1.03Ref. price · indicative, final on quote
IRL520NPBF datasheet
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRL520NPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4V, 10V
Current - continuous drain (Id) @ 25°C10A (Tc)
Power dissipation48W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs180mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs20 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds440 pF @ 25 V

Product details

Gate drive and switching — what 20 nC gate charge means for your driver

The IRL520NPBF: Gate charge is 20 nC at 5V Vgs. That is moderate — a typical MCU GPIO sourcing a few milliamps will take microseconds to charge the gate, so for PWM above a few kHz you will want a dedicated gate driver. The input capacitance is 440 pF at 25V Vds, which helps keep the Miller plateau manageable. The ±16V maximum gate-source rating gives headroom for gate-drive overshoot, but stay within the 4V to 10V drive range the datasheet specifies for achieving the rated Rds(on).

Sourcing and lifecycle

The IRL520NPBF carries an Active product status, meaning Infineon continues to manufacture it with no announced end-of-life. For a BOM line that needs this TO-220AB N-channel part, there is no LTB clock to manage.

Frequently asked questions

What is the Rds(on) of the IRL520NPBF at 10V Vgs?

Maximum on-resistance is 180 milliohms at 6A drain current with 10V gate-source drive.

Can the IRL520NPBF replace the IRF520 in a 100V circuit?

Both are 100V N-channel TO-220AB MOSFETs, but the IRL520NPBF has a lower gate threshold (2V max vs higher for the IRF520), making it logic-level compatible. Check the pinout — both use the standard TO-220 pin arrangement — and verify that the 180mOhm Rds(on) and 10A rating meet your load requirements. The IRF520 typically has higher Rds(on) and requires a higher gate drive voltage.