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IRF9530NSTRLPBF

Infineon Technologies · HEXFET® Series

Infineon / International Rectifier HEXFET P-Channel MOSFET, IRF9530NSTRLPBF, 100 V Vdss, 14 A Id, 200 mOhm Rds(on) at 10 V, 58 nC Qg, D2PAK (TO-263) surface mount, -55 to 175 °C.

Infineon Technologies IRF9530NSTRLPBF
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

[ORIGINAL SEALED] [PRE-SHIP HD PHOTOS] [30D WARRANTY · COC] [TRACKED DAP/DDP]

Technical specifications

IRF9530NSTRLPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C14A (Tc)
Power dissipation3.8W (Ta), 79W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs200mOhm @ 8.4A, 10V
Gate charge (Qg) (Max) @ vgs58 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds760 pF @ 25 V
100% Footprint Match · Solder-Ready (No PCB Redesign Needed)

Need Stock or a Drop-in Second-Source for IRF9530NSTRLPBF?

Package: TO-220AB · Pin-compatible replacements with immediate Shenzhen spot stock

Footprint Match 98%
Supply Chain & Allocation Reality:

The P-channel TO-220 row is the high-side switch of practical electronics: loads that must sit above ground and switch on the positive rail, driven straight from logic with a level-shifting transistor and no bootstrap - the circuit simplicity that keeps these parts alive in 12V and 24V designs. The IRF9540 is the classic -100V face of the row (the P-counterpart of the IRF540 lineage) and its on-resistance shows the age; the IRF4905 is the modern brute (-74A at 20 milliohms, but only -55V) and the IRF5210 the middle ground that keeps the 100V rating with triple the original conductance. All three are standard-drive parts, and every substitution in this row is decided by two numbers: rail voltage and the gate drive actually available.

Verified Pin-Compatible Replacements (3 verified alternatives)

IRF4905 Infineon (IR) TO-220AB
Functional Equivalent
Availability & Target Pricing:

The Modern Brute - Watch the Voltage Ceiling

Shenzhen Spot Stock (24-48h Dispatch)

Electrical & Core Specs:

The high-current member: -55V / -74A with on-resistance about 20 milliohms at -10V gate - ten times the conductance of the IRF9540, with a gate charge (120-180nC) to match.

The -55V ceiling caps it at 48V rails and below - the whole trade against the 9540s -100V.

Compatibility & Drop-In Notes: Substitution rule of the row: buy conductance with voltage; if the rail is under 48V and the load is heavy, the 4905 is the upgrade. Above 48V the row returns to the 100V members and patience.
Package & Solder Footprint: TO-220AB, same pin order G / D / S as the family.
Shenzhen Warehouse Stock & MOQ: Active production lines; among the counterfeited P-channel rows, verify lots.
Request Volume Quote for IRF4905 Compare IRF9530NSTRLPBF vs IRF4905 Spec Matrix
IRF5210 Infineon (IR) TO-220AB
Functional Equivalent
Availability & Target Pricing:

The 100V Middle Ground

Shenzhen Spot Stock (24-48h Dispatch)

Electrical & Core Specs:

The balanced member: -100V / -40A with about 60 milliohms at -10V - three times the IRF9540s conductance at the same voltage rating and similar power class.

Full -100V class; the direct answer where a 9540 ran hot but the rail forbids the 4905.

Compatibility & Drop-In Notes: The gate charge grows with the die (about 180nC class): in marginally driven circuits the switching speed changes - usually improving, occasionally re-tuning the EMI. Check the gate resistor network if the board was noise-sensitive.
Package & Solder Footprint: TO-220AB standard.
Shenzhen Warehouse Stock & MOQ: Active line; the practical 100V default of the row.
Request Volume Quote for IRF5210 Compare IRF9530NSTRLPBF vs IRF5210 Spec Matrix
IRF9530 Vishay / Infineon TO-220AB
Functional Equivalent
Availability & Target Pricing:

The Lighter Original Sibling

Shenzhen Spot Stock (24-48h Dispatch)

Electrical & Core Specs:

The -100V / -12A member of the same original generation: the same vintage 200-milliohm-class on-resistance at lower current - the part where a 9540 design was already at the edge.

Same -100V class.

Compatibility & Drop-In Notes: Direction rules: richer members (9540, 5210, 4905) substitute the 9530 downward freely; the 9530 replaces the 9540 only where the current budget says the smaller die is honest.
Package & Solder Footprint: TO-220AB standard pinout.
Shenzhen Warehouse Stock & MOQ: Legacy and current stock; the classic pair drawer.
Request Volume Quote for IRF9530 Compare IRF9530NSTRLPBF vs IRF9530 Spec Matrix
Buyer & Quality Checklist for Sourcing Alternatives
  • The P-channel drive rule: the gate must go below the source to switch on, and the source sits on the positive rail. A small NPN level shifter (or open-drain logic) does the job - no bootstrap, no charge pump, which is the entire reason to choose P-channel for high-side loads.
  • Standard drive, again: the on-resistances above are specified at -10V gate. From a 5V rail directly, every part in this row under-drives and heats - use the level shifter the circuit expects, and a pull-up to the rail to hold the switch off at boot.
  • Rail voltage decides the member: -55V stops at 48V rails (IRF4905), -100V for everything above (IRF9540 legacy, IRF5210 modern, IRF9530 light). Never trade the voltage ceiling for conductance on a transient-rich rail.
  • P-channel conductance costs silicon: at equal ratings a P-MOSFET on-resistance runs several times the N-channel die - that is why the rule of thumb sends high-side switching above about 5-10A back to N-channel plus a bootstrap driver.
  • Gate charge sets the drive impedance: the 4905/5210 class wants a low-impedance pull-up (or driver) for credible switching edges; a 100k pull-up and a lazy transistor turn a low-Rds part into a linear heater.
  • In repair, the P-MOSFET usually dies of gate overvoltage (rail transients through the level shifter) or load dump - check the gate network and any clamp before fitting the replacement, or the new part inherits the death certificate.
Frequently Asked Technical Questions

Q: What is the difference between IRF9540 and IRF4905?

A: Voltage and conductance: IRF9540 is -100V / -19A at about 200 milliohms, IRF4905 is -55V / -74A at about 20. The 4905 is the modern low-loss part but only suits rails to 48V; the 9540 survives the higher-voltage rails it was designed for.

Q: Can I drive an IRF9540 directly from a 5V microcontroller?

A: Not properly - the family is standard-drive (on-resistance at -10V gate). Use an NPN or small-MOSFET level shifter with a pull-up to the source rail so the gate actually swings below the source. Direct 5V drive leaves the channel partially enhanced and the part hot.

Q: When should I use N-channel instead of P-channel for high-side switching?

A: Above roughly 5-10A of load: N-channel conductance is several times better at equal die area, in exchange for a bootstrap or charge-pump gate supply. The P-channel row wins below that by circuit simplicity, not by efficiency.

Technical details

P-Channel 100 V switch for high-side loads

The IRF9530NSTRLPBF is a P-Channel enhancement-mode HEXFET MOSFET in the D2PAK (TO-263) surface-mount package, rated for 100 V drain-source and 14 A continuous drain current. It is designed for high-side switching applications where a P-Channel device eliminates the need for a charge-pump gate driver — the gate is simply pulled low to turn the FET on.

Maximum on-resistance is 200 mOhm at a gate-source voltage of 10 V and 8.4 A drain current. This is the figure to use for worst-case conduction loss calculations at the rated gate drive — at lower Vgs the Rds(on) rises, so the 10 V drive rail is effectively mandatory to achieve the rated current.

Thermal limits and package power dissipation

Power dissipation is rated at 3.8 W at 25 °C ambient (Ta) and 79 W at the case (Tc). The large D2PAK tab carries the heat — the board copper area under the tab sets the real thermal resistance. For continuous 14 A operation, a heatsink or a substantial PCB copper pour is expected.

This is a moderate gate charge for a 14 A FET — a standard gate driver with a few hundred mA peak current will switch it in the tens of nanoseconds. The 58 nC figure is the basis for the driver's average current budget at the target switching frequency.

IRF9530NSTRLPBF
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