Infineon IRF7403TR, N-Channel HEXFET® MOSFET, 30 V Vdss, 8.5 A Id, 22 mOhm Rds(on) at 4 A, 10 V, 57 nC Qg, 1200 pF Ciss, SOIC-8, -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 8.5A (Ta) |
| Power dissipation | 2.5W (Ta) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 22mOhm @ 4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 57 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1200 pF @ 25 V |
The 57 nC total gate charge and 1200 pF input capacitance at 25 V Vds give a moderate switching speed; a gate driver with 1 A to 2 A peak current is adequate for several hundred kHz operation. The 2.5 W power dissipation at 25°C ambient is the package limit in still air — for continuous 8.5 A operation, derate the current or add copper-area heatsinking on the PCB.
Infineon lists the IRF7403TR as obsolete. No direct replacement has been assigned by the manufacturer.
Infineon has not assigned an official direct replacement. For new designs, select a current-production N-channel MOSFET in the same SOIC-8 package with 30 V Vdss and 8.5 A or higher Id rating. No single pin-compatible alternate is documented by the manufacturer.
The IRF7403PBF is the lead-free (PbF) version of the same die in the same SOIC-8 package. Electrically they are identical. The TR suffix indicates Tape & Reel packaging; the PBF suffix indicates lead-free plating. If your BOM calls for the TR reel quantity, verify the PBF variant's packaging option — it may ship in tube or different reel count.