Infineon Technologies · HEXFET® Series
Infineon HEXFET IRFP140NPBF, N-Channel MOSFET, 100 V Vdss, 33 A Id at 25 °C, 52 mOhm Rds(on) at 10 V, TO-247-3 through-hole package, -55 °C to 175 °C junction temperature.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 33A (Tc) |
| Power dissipation | 140W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 52mOhm @ 16A, 10V |
| Gate charge (Qg) (Max) @ vgs | 94 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1400 pF @ 25 V |
The 52 mOhm Rds(on) at Vgs=10 V and Id=16 A defines the conduction loss at the operating point. The 140 W package limit provides headroom for heatsink design.
The through-hole TO-247 package is a standard industrial form factor with broad second-source availability from Infineon's HEXFET line.
