IRF9530NPBF, HEXFET P-Channel MOSFET, 100 V drain-source, 14 A continuous drain, 200 mOhm Rds(on) at 10 V, TO-220AB, -55°C to 175°C junction.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | P-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 14A (Tc) |
| Power dissipation | 79W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 200mOhm @ 8.4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 58 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 760 pF @ 25 V |
The IRF9530NPBF is a HEXFET P-channel MOSFET rated 100 V drain-source and 14 A continuous drain at 25°C case temperature.
Through-hole TO-220AB package, three leads, standard 0.100-inch pitch. ROHS3 compliant.
No official second-source or direct-replacement order code is listed, but the TO-220AB footprint is a standard across P-channel MOSFETs in this voltage class.
The TO-220AB footprint is common across P-channel 100 V MOSFETs, but a pin-compatible substitute must be verified against the specific Rds(on), gate charge, and threshold requirements of your design.
Yes — the supplier device package is TO-220AB, a standard through-hole three-lead footprint with 0.100-inch pitch. It is mechanically interchangeable with other TO-220AB devices in the same lead form.