IRFZ46NPBF, HEXFET® Series, N-Channel MOSFET, 55V Vdss, 53A Id, 16.5mOhm Rds(on) @ 28A 10V, 72nC Qg @ 10V, -55°C to 175°C, TO-220-3 (TO-220AB), Through Hole, Tube.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 53A (Tc) |
| Power dissipation | 107W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 16.5mOhm @ 28A, 10V |
| Gate charge (Qg) (Max) @ vgs | 72 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1696 pF @ 25 V |
The IRFZ46NPBF is an N-channel enhancement-mode MOSFET from Infineon's HEXFET series. It blocks 55 V drain-to-source and conducts 53 A continuous at 25°C case temperature, with a maximum on-resistance of 16.5 mOhm driven at 10 V gate voltage.
ROHS3 compliance is confirmed, so it meets current EU and global restriction directives without exemption.
55 V drain-to-source voltage, 53 A continuous drain current at 25°C case temperature, and 16.5 mOhm maximum on-resistance at 28 A with 10 V gate drive.
Gate charge is 72 nC at 10 V gate drive. Maximum gate threshold voltage is 4 V at 250 µA drain current.