IRF1405PBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET® IRF1405PBF, N-Channel MOSFET, 55V Vdss, 169A Id, 5.3mOhm Rds(on), TO-220-3 Through Hole, -55°C to 175°C.

Infineon Technologies IRF1405PBF
Download datasheet (PDF)
[IN STOCK] In Stock: 1,568 pcs
$1.51/ pc

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Technical specifications

IRF1405PBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C169A (Tc)
Power dissipation330W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs5.3mOhm @ 101A, 10V
Gate charge (Qg) (Max) @ vgs260 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5480 pF @ 25 V

Technical details

It is built for low on-resistance switching — 5.3 mOhm max at 101A with a 10V gate drive — which keeps conduction losses down in high-current paths like motor drives, DC-DC converters, battery isolation switches, and power-supply output stages.

Package and field-service angle

TO-220-3 through-hole. That means you can swap this on site with a basic soldering iron and a solder sucker — no hot-air station, no preheater. The tab is the drain, the leads are gate and source; orientation is obvious once you have the datasheet pinout in front of you. If you are stocking a field-repair kit, this is the kind of part that fits: common package, single-screw mount to a heatsink, no fragile SMD pads to lift.

For BOM planning, this is a stable line item — no imminent obsolescence risk.

IRF1405PBF
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