Infineon IRF7402PBF, HEXFET® N-Channel MOSFET, 20V Vdss, 6.8A Id, 35mOhm Rds(on) @ 4.5V, 2.5W, SO-8, -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 2.7V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 6.8A (Ta) |
| Power dissipation | 2.5W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 700mV @ 250µA (Min) |
| Rds on (Max) @ id, vgs | 35mOhm @ 4.1A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 22 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 650 pF @ 15 V |
The 35 mOhm maximum on-resistance at 4.5 V gate drive and 4.1 A drain current is the headline figure for this part. Gate charge of 22 nC at 4.5 V keeps switching losses moderate for a 20 V part in a low-to-medium frequency DC-DC converter or load switch.
The 150°C maximum junction temperature provides headroom for high-current operation in a compact SO-8 package, but the 2.5 W power dissipation at 25 °C ambient means the thermal design must be verified at the expected operating point.
No official replacement order code is recorded for the IRF7402PBF. For a pin-compatible substitute, compare the 20 V Vdss, 6.8 A Id, 35 mOhm Rds(on) at 4.5 V, and SO-8 package against other N-channel logic-level MOSFETs in the same footprint. The sourcing team can help identify a cross when you submit an RFQ.
Submit an RFQ to confirm availability and current pricing; the part is quoted to order.