What the 55 V / 64 A / 14 mOhm ratings mean for your load
The IRFZ48NPBF is an N-channel power MOSFET from Infineon's HEXFET® series, rated for 55 V drain-source breakdown and 64 A continuous drain current at 25°C case temperature. The 14 mOhm maximum on-resistance at 32 A and 10 V gate drive keeps conduction losses low in switching and load-switch applications. The 81 nC gate charge at 10 V means the gate driver must supply about 81 nC per switching cycle. The -55°C to 175°C junction temperature range qualifies this part for industrial and automotive under-hood environments.
Through-hole TO-220AB — board-level fit
The TO-220AB through-hole package (three leads, metal tab) is a standard footprint for power semiconductors. It mounts into a PCB pattern and the tab can be soldered to a copper pour or bolted to a heatsink. The 130 W power dissipation rating assumes the case is held at 25°C — real-world derating follows the thermal resistance junction-to-case, so a proper heatsink is required for continuous loads above a few tens of watts.
Active production — no LTB risk
No last-time-buy or obsolescence notice is in effect. ROHS3 compliant. For new designs or BOM freeze, this part carries no near-term supply risk from the manufacturer side.