Infineon Technologies · HEXFET® Series
IRFZ48NPBF, HEXFET® N-Channel MOSFET, 55V Vdss, 64A Id, 14mOhm Rds(on) at 10V, 81nC gate charge, TO-220AB, -55°C to 175°C.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 64A (Tc) |
| Power dissipation | 130W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 14mOhm @ 32A, 10V |
| Gate charge (Qg) (Max) @ vgs | 81 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1970 pF @ 25 V |
The TO-220AB through-hole package (three leads, metal tab) is a standard footprint for power semiconductors. It mounts into a PCB pattern and the tab can be soldered to a copper pour or bolted to a heatsink.
ROHS3 compliant. For new designs or BOM freeze, this part carries no near-term supply risk from the manufacturer side.
