IRF1404PBF

Infineon Technologies · HEXFET® Series

Infineon Technologies HEXFET® series N-Channel MOSFET, IRF1404PBF, 40 V drain-source, 202 A continuous drain, 4 mOhm on-resistance, TO-220-3 through-hole package.

Infineon Technologies IRF1404PBF
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Technical specifications

IRF1404PBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C202A (Tc)
Power dissipation333W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs4mOhm @ 121A, 10V
Gate charge (Qg) (Max) @ vgs196 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5669 pF @ 25 V

Technical details

Gate drive and switching profile

The IRF1404PBF: The ±20 V gate-source maximum gives margin for drive overshoot in hard-switched topologies.

NRND status and sourcing posture

Existing BOM lines can still be sourced, but new designs should evaluate the official successor or an alternative from the same HEXFET family. The part remains ROHS3 compliant. No pin-compatible second source is recorded on the same order code — the replacement path is a parametric crossover within the 40 V N-channel TO-220 portfolio.

Thermal and environmental envelope

Operating junction temperature range spans -55°C to 175°C, which covers industrial enclosures, automotive under-hood environments, and high-ambient power supplies. The TO-220AB through-hole package allows direct heatsink mounting with a thermal pad or mica insulator.

IRF1404PBF
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