The IRF5305STRLPBF: With a maximum Rds(on) of 60mOhm at 16A and 10V gate drive, this MOSFET targets moderate-frequency switching where conduction loss dominates. The 63nC typical gate charge at 10V means the gate driver must supply about 63nC per switching cycle.
IRF5305STRLPBF
Infineon Technologies · HEXFET® Series
Infineon HEXFET® P-Channel MOSFET, 55V Vdss, 31A Id, 60mOhm Rds(on) at 10V, D2PAK (TO-263) surface mount, -55°C to 175°C junction temperature, ROHS3 compliant.
[IN STOCK] In Stock: 4,391 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 31A (Tc) |
| Power dissipation | 3.8W (Ta), 110W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 60mOhm @ 16A, 10V |
| Gate charge (Qg) (Max) @ vgs | 63 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1200 pF @ 25 V |
Technical details
IRF5305STRLPBF
[ALLOC] verified