Infineon HEXFET® P-Channel MOSFET, 55V Vdss, 31A Id, 60mOhm Rds(on) at 10V, D2PAK (TO-263) surface mount, -55°C to 175°C junction temperature, ROHS3 compliant.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | P-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 31A (Tc) |
| Power dissipation | 3.8W (Ta), 110W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 60mOhm @ 16A, 10V |
| Gate charge (Qg) (Max) @ vgs | 63 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1200 pF @ 25 V |
The IRF5305STRLPBF: With a maximum Rds(on) of 60mOhm at 16A and 10V gate drive, this MOSFET targets moderate-frequency switching where conduction loss dominates. The 63nC typical gate charge at 10V means the gate driver must supply about 63nC per switching cycle.
It is ROHS3 compliant, meeting the latest exemption-free RoHS directive.
The two parts share the same HEXFET die and electrical specifications. The IRF5305STRLPBF is the Tape & Reel packaging variant for automated SMT assembly, while the IRF5305PBF is the tube packaging variant for hand-placing or smaller quantities.
Yes, the IRF5305STRLPBF is ROHS3 compliant, meeting the current exemption-free RoHS directive requirements.
Within the same HEXFET family, the IRF5305PBF (tube) and IRF5305CTPBF (cut tape) are electrically identical and pin-compatible, differing only in shipping format. For a higher-current alternative, the IRF4905PBF (55V, 74A) shares the same D2PAK footprint but is an N-Channel device — verify circuit polarity before substituting.