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VHF/VHF RF AMPLIFIER

VHF/VHF RF AMPLIFIER

VHF/VHF RF AMPLIFIER

VHF/VHF RF AMPLIFIER

VIDEO AMPLIFIERS RF RECEIVER

Analog Devices AD8306ARZ, Limiting-Logarithmic Amplifier, 16-SOIC (0.154", 3.90mm Width) surface-mount package, Tube, applications Receiver Signal Strength Indication (RSSI), lifecycle current, ROHS3 compliant.

NXP AFT05MP075NR1 RF MOSFET LDMOS, dual configuration, 520 MHz, 70 W output, 18.5 dB gain, 12.5 V test, 40 V rated, TO-270 WB-4 surface mount.

Analog Devices AD8307ARZ-REEL, Logarithmic Amplifier, Receiver Signal Strength Indication (RSSI), Surface Mount, 8-SOIC (0.154", 3.90mm Width), Tape & Reel (TR); Cut Tape (CT), Active.

STMicroelectronics PD57018S-E RF MOSFET LDMOS, 28V, 945MHz, 18W output, 16.5dB gain, 2.5A, PowerSO-10RF exposed pad, ROHS3.

Maxim Integrated MAX2244EBL, 2.5 GHz Power Amplifier, 9-WFBGA/CSPBGA, 9-UCSP (1.52x1.52 mm), Surface Mount, Active.

Maxim Integrated MAX2246EBL 2.5 GHz power amplifier, 9-WFBGA/CSPBGA package, 9-UCSP (1.52x1.52 mm) supplier package, surface mount, for Bluetooth and cordless phone applications.

Analog Devices MAX2602ESA+ NPN RF transistor, 15V Vceo, 1GHz fT, 11.6dB gain, 3.3dB NF @ 836MHz, 1.2A Ic, 8-SOIC-EP, Tube.

Infineon BFR193WH6327XTSA1 RF NPN transistor, 12V Vce, 80 mA Ic, 8 GHz fT, 10.5 dB ~ 16 dB gain, 1 dB ~ 1.6 dB noise figure @ 900 MHz ~ 1.8 GHz, 580 mW, SOT323, surface mount.

NXP MRFE6VS25LR5 RF LDMOS transistor, 25.9 dB gain at 512 MHz, 25 W output, 50 V test, NI-360 chassis mount, active.

NXP BFU730LXZ NPN RF transistor, 53 GHz fT, 15.8 dB gain, 0.75 dB noise figure at 6 GHz, 3 V Vceo, 30 mA Ic, 160 mW max power, 3-XFDFN package, surface mount, ROHS3 compliant.

Maxim Integrated MAX2246EBL+T, Power Amplifier, 2.5GHz, 22dBm/20dBm output, Bluetooth/Cordless Phone applications, 9-WFBGA CSPBGA package, Surface Mount, Active.

NXP MRFE6VS25GNR1 LDMOS RF power transistor, 25W output at 512MHz, 25.4dB gain, 50V test supply, 133V rated voltage, TO-270-2 GULL surface-mount package, ROHS3 compliant.

NXP BFU550W135 NPN wideband silicon RF transistor, active lifecycle, Bulk packaging.

STMicroelectronics TS274IPT CMOS quad operational amplifier, 3.5 MHz gain bandwidth, 5.5 V/µs slew rate, 1 pA input bias, 14-TSSOP package, -40°C to 125°C temperature range.

Analog Devices ADL5562ACPZ-R7 RF/IF differential amplifier, 3.3 GHz -3dB bandwidth, 9800 V/µs slew rate, 80 mA supply, differential output, 16-LFCSP-VQ 3x3 mm package, Tape & Reel.

Analog Devices MAX4223ESA+ current-feedback operational amplifier, single circuit, 1 GHz -3 dB bandwidth, 1100 V/µs slew rate, 6 mA supply, 8-SOIC surface-mount package, -40°C to 85°C operation.

Infineon BFR182WH6327XTSA1 NPN RF transistor, 12 V VCEO, 35 mA Ic, 8 GHz fT, 19 dB gain, 0.9 dB noise figure at 900 MHz, 250 mW max power, SC-70/SOT-323 package, surface mount.

Infineon Technologies BFR106E6327HTSA1 NPN RF transistor, 15V Vceo, 5GHz fT, 8.5dB ~ 13dB gain, 1.8dB ~ 3dB noise figure, 700mW, SOT-23-3.

Infineon BFS481H6327XTSA1 RF transistor, dual NPN, 8 GHz transition frequency, 20dB gain, 0.9–1.2dB noise figure, 12V VCEO, 20mA Ic, SOT-363 package.

Infineon BFR93AE6327HTSA1 NPN RF transistor, 6 GHz transition frequency, 12 V VCEO, 90 mA Ic, 9.5 dB to 14.5 dB gain, SOT-23-3 package, 150 °C junction temperature.

Infineon BFR740L3RHE6327XTSA1 NPN RF transistor, 42 GHz transition frequency, 24.5 dB gain, 0.5 dB noise figure, 4.7 V Vceo, 30 mA Ic, 160 mW, SC-101/SOT-883 TSLP-3 package, surface mount.

Infineon Technologies BFR340L3E6327XTMA1 NPN RF transistor, 14 GHz transition frequency, 17.5 dB gain, 1.15 dB noise figure, PG-TSLP-3-1 package, 9 V Vceo, 10 mA Ic.

NXP BFU530XAR RF NPN transistor, 12V VCEO, 11 GHz fT, 22 dB gain, 0.7 dB noise figure at 900 MHz, AEC-Q101, SOT143B, -40 to 150°C junction.

NXP Semiconductors BFU550R RF NPN transistor, 12V Vce, 50mA Ic, 11GHz fT, 21dB gain, 0.7dB noise figure, AEC-Q101, SOT-143B.

NXP AFT09MS031NR1 LDMOS RF power transistor, 870 MHz, 31W output, 17.2 dB gain, 13.6 V test voltage, TO-270AA surface-mount package.

NXP Semiconductors BFU520AR RF NPN transistor, 12V Vceo, 10GHz fT, 18dB gain, 0.7dB NF, AEC-Q101 automotive grade, SOT-23 package.

NXP BFU660F,115 NPN RF transistor, 21 GHz transition frequency, 5.5 V Vceo, 60 mA Ic, 0.6 dB ~ 1.2 dB noise figure at 1.5 GHz ~ 5.8 GHz, SOT-343F package, surface mount.

NXP Semiconductors BFU550WX NPN RF transistor, Automotive AEC-Q101, 11 GHz fT, 18 dB gain, 0.6 dB NF at 900 MHz, SC-70 SOT-323 package, surface mount.

NXP MRFE6VP5150GNR1 RF MOSFET LDMOS, Dual, 150W, 230MHz, 26.1dB Gain, 50V, TO-270 WB-4 Gull, Surface Mount.

STMicroelectronics PD54008L-E LDMOS RF MOSFET, 500 MHz, 15 dB gain, 8 W output, 7.5 V test, 8-PowerVDFN PowerFLAT 5x5.

STMicroelectronics PD57060-E RF LDMOS transistor, PowerSO-10 exposed pad, 945 MHz, 60 W output, 14.3 dB gain at 28 V / 100 mA test, 65 V rated, 7 A rated.

Infineon BFR360FH6327XTSA1 NPN RF transistor, 15.5dB gain, 14GHz fT, 1dB noise figure at 1.8GHz, 9V VCEO, 35mA Ic, SOT-723 package, 210mW max power, ROHS3 compliant.

NXP BFU610F,115 NPN RF transistor, 15 GHz fT, 0.9-1.7 dB noise figure at 1.5-5.8 GHz, 13.5-23.5 dB gain, 5.5 V Vceo, 10 mA Ic, SOT-343F surface-mount package, 150°C junction temperature.

Texas Instruments VIP10™ series LMH6714MA/NOPB current feedback operational amplifier, single circuit, 400 MHz -3dB bandwidth, 1800V/µs slew rate, 5.6 mA supply current, 70 mA output per channel, 8-SOIC package, surface mount.

Narrow band high power amplifier for CATV applications, 115 mA supply current, 1 circuit, chassis mount module, 7-CATV module package, ROHS3 compliant, active lifecycle.

Renesas HA5023IBZ96 dual current feedback amplifier, 350V/µs slew rate, 125 MHz -3dB bandwidth, ±4.75V to ±18V supply, 8-SOIC package, surface mount, ROHS3 compliant.

Analog Devices AD8310ARMZ-REEL7, Logarithmic Amplifier, 8-TSSOP/8-MSOP (3.00mm Width), Surface Mount, Receiver Signal Strength Indication (RSSI) application, Tape & Reel.

NXP MRF101AN LDMOS RF transistor, 115W power output, 21.1dB gain, 1.8MHz~250MHz frequency range, TO-220-3 package, 133V rated voltage, ROHS3 compliant.

NXP AFT09MS007NT1 LDMOS RF power transistor, 870MHz, 7.3W output power, 15.2dB gain, 30V rated, 100mA test current, PLD-1.5W surface mount package, Tape & Reel.

NXP BFR505215 NPN RF transistor, 9 GHz transition frequency, 150 mW max power, SOT-23 surface-mount package, 15 V Vceo, 18 mA Ic max, 1.2 dB noise figure at 900 MHz.

Infineon BFP520FE6327 NPN RF transistor, 45 GHz transition frequency, 22.5 dB gain, 0.95 dB noise figure at 1.8 GHz, 100 mW max power, 4-TSFP surface-mount package.

Infineon BFP740E6327 SiGe NPN RF transistor, 42 GHz transition frequency, 27 dB gain, 0.5 dB noise figure at 1.8 GHz, 160 mW max power, PG-SOT343-4 package, surface mount, active production.

Infineon BFP196WH6740 NPN RF transistor, 7.5 GHz transition frequency, 19 dB gain, 150 mA Ic, 12 V Vceo, SC-82A SOT-343 package, AEC-Q101 qualified, 150°C junction temperature.

Infineon BFR460L3E6327XTMA1 RF NPN transistor, 5.8 V Vceo, 22 GHz fT, 16 dB gain, 1.1 dB noise figure, SC-101/SOT-883 package, PG-TSLP-3-1, surface mount.

Infineon BFP420E6327 NPN RF transistor, 25 GHz transition frequency, 21 dB gain, 1.1 dB noise figure at 1.8 GHz, 5 V Vceo, 35 mA Ic, 160 mW max power, SC-82A SOT-343 surface mount.

Infineon BFP720H6327 NPN RF transistor, 45 GHz fT, 10.5 dB to 28.5 dB gain, 0.4 dB to 0.95 dB noise figure, 4.7 V VCEO, 25 mA Ic max, SC-82A / SOT-343 package, surface mount.

NXP Semiconductors MMRF1014NT1 LDMOS RF power transistor, 68V rated, 4W output at 1.96GHz, 18dB gain, PLD-1.5 surface-mount package, Tape & Reel.

NXP MW6S010GNR1 LDMOS RF power transistor, 960 MHz, 18 dB gain, 10 W output, 28 V test, TO-270BA surface-mount, ROHS3 compliant.

NXP AFM907NT1 LDMOS RF MOSFET, 136MHz ~ 941MHz, 8.4W output at 10.8V, 16-VDFN Exposed Pad, Surface Mount, Active, ROHS3 Compliant.

NXP MW7IC2020NT1 LDMOS RF transistor, 2.14 GHz, 32.6 dB gain, 2.4 W output, 28 V test, 65 V rated, 24-PQFN (8x8) package, surface mount.

NXP MRFE6S9060NR1 LDMOS RF power transistor, 66V rated, 880 MHz, 21.1 dB gain, 14 W output power, TO-270AA surface-mount package.

NXP MRF101BN LDMOS RF power transistor, 115W output, 21.1dB gain, 1.8-250 MHz, 50V test, TO-220-3, ROHS3, Active.

NXP Semiconductors MRFE6S9046NR1 LDMOS RF power transistor, 35.5 W output, 960 MHz, 19 dB gain, 28 V test, TO-270 WB-4 package, Bulk.

NXP A3G26D055NT4 GaN RF MOSFET, 8 W output at 48 V, 13.9 dB gain, 100 MHz–2.69 GHz, 6-LDFN exposed pad, surface mount, ROHS3 compliant.

Analog Devices MAX4081TASA+T current sense amplifier, single circuit, 150 kHz bandwidth, 4.5-76 V supply, 8-SOIC package, surface mount, -40 to 125°C.