RF power transistor for 900 MHz band amplifiers
The STMicroelectronics PD57018S-E is an LDMOS RF power transistor designed for 945 MHz band amplifier stages, delivering 18 W output power at 28 V test voltage with 16.5 dB gain. The 65 V rated drain voltage provides headroom for load-mismatch conditions in base station or industrial RF generator applications.
At 945 MHz the PD57018S-E delivers 16.5 dB gain with 18 W output power when biased at 100 mA quiescent current and 28 V drain supply. That gain figure determines the driver stage count: a single stage from a 0 dBm source reaches roughly 16.5 dBm drive, enough to push the part into compression. The 18 W output suits final stages in 10–20 W transmitter chains or as a driver for higher-power LDMOS devices in the 100–300 W range.
Package and thermal management for the PowerSO-10RF
The PowerSO-10RF package with exposed bottom pad (also listed as supplier device package PowerSO-10RF Straight Lead) is the standard ST LDMOS RF power package for this power class. The 65 V rated drain voltage gives margin above the 28 V test condition, but the thermal design should assume worst-case dissipation at 18 W output under mismatch.
Active production and ordering posture
It is ROHS3 compliant.